IRLR8726TRPBF datasheet, PDF - EEWORLD Datasheet

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IRLR8726TRPBF: Description86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; CategoryDiscrete semiconductor The transistor; File Size355KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRLR8726TRPBF Overview

86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

IRLR8726TRPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	120 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	86 A
Maximum drain current (ID)	86 A
Maximum drain-source on-resistance	0.058 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	340 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 97146A

IRLR8726PbF

IRLU8726PbF

HEXFET

Power MOSFET

Applications

High Frequency Synchronous Buck

DSS

DS(on)

max

Qg (typ.)

Converters for Computer Processor Power

30V 5.8m @V

= 10V 15nC

High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

Benefits

Very Low R

DS(on)

at 4.5V V

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

Lead-Free

RoHS compliant

D-Pak

IRLR8726PbF

I-Pak

IRLU8726PbF

Gate

Drain

Max.

± 20

Source

Units

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

= 100°C

STG

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

340

W/°C

°C

0.5

-55 to + 175

300 (1.6mm from case)

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Typ.

Max.

2.0

110

Units

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

ghÃ

–––

Notes

through

are on page 11

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

www.irf.com

11/23/09

IRLR8726TRPBF Related Products

	IRLR8726TRPBF	IRLR8726PBF_09	IRLU8726PbF	IRLR8726PbF
Description	86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA	86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Number of components	1	1	1	1
Number of terminals	2	2	3	2
surface mount	YES	Yes	NO	YES
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Lead free	-	Lead free	Lead free
Is it Rohs certified?	conform to	-	conform to	conform to
Maker	International Rectifier （ Infineon ）	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA	-	TO-251AA	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2	-	ROHS COMPLIANT, IPAK-3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	-	3	3
Reach Compliance Code	compliant	-	not_compliant	compliant
ECCN code	EAR99	-	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	120 mJ	-	120 mJ	120 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	-	30 V	30 V
Maximum drain current (Abs) (ID)	86 A	-	86 A	86 A
Maximum drain current (ID)	86 A	-	86 A	86 A
Maximum drain-source on-resistance	0.058 Ω	-	0.058 Ω	0.058 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	-	TO-251AA	TO-252AA
JESD-30 code	R-PSSO-G2	-	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e3	-	e3	e3
Humidity sensitivity level	1	-	1	1
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	-	175 °C	175 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	-	260	260
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	75 W	-	75 W	75 W
Maximum pulsed drain current (IDM)	340 A	-	340 A	340 A
Certification status	Not Qualified	-	Not Qualified	Not Qualified
Terminal surface	MATTE TIN OVER NICKEL	-	Matte Tin (Sn) - with Nickel (Ni) barrier	MATTE TIN OVER NICKEL
Maximum time at peak reflow temperature	30	-	30	30

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