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DF08DB106

Description
1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size251KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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DF08DB106 Overview

1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

DF005 THRU DF10 AND DB101 THRU DB107
SILICON BRIDGE RECTIFIERS
Reverse Voltage -
50 to 1000 Volts
DB-1
Forward Current -
1.0 Ampere
FEATURES
+
0.255(6.5)
0.245(6.2)
0.350(8.9)
0.300(7.6)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,5 lbs. (2.3kg) tension
0.365(9.3)
0.355(9.0)
0.135(3.4)
0.115(2.9)
0.165(4.2)
0.155(3.9)
MECHANICAL DATA
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Mounting Position:
Any
Weight:0.04
ounce, 1.0 grams
0.020
(0.5)
0.060
0.205(5.2)
0.195(5.0)
(1.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load, for current capacitive load derate by 20%.
SYMBOLS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current
0.06”
(1.5mm) lead lenth
at T
A
=40 C (Note 2)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
Maximum instantaneous forward voltage drop
per birdge element at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
DF005 DF01 DF02 DF04 DF06 DF08 DF10
DB101 DB102 DB103 DB104 DB105 DB106 DB107 UNITS
50
100
200
400
600
800 1000 VOLTS
35
70
140
280
420
560
700 VOLTS
50
100
200
400
600
800 1000 VOLTS
1.0
50.0
10
1.1
10
0.5
25
40
-65 to +150
-65 to +150
Amps
Amps
A
2
s
Volts
u
A
mA
pF
C/W
C
C
I
FSM
I
2
t
V
F
I
R
C
J
R
q
JA
T
J
T
STG
NOTES:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2.Unit mounted on P.C. board with 0.51” x 0.51”(13x13mm) copper pads.
www.shunyegroup.com

DF08DB106 Related Products

DF08DB106 DF005 DF02DB103 DF005DB101 DF01DB102 DF06DB105 DF10DB107 DF04DB104
Description 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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