P4KE530 and P4KE550
New Product
Vishay Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
Steady State Power
1W
Peak Pulse Power
300W
Breakdown Voltage
530, 550V
DO-204AL (DO-41 Plastic)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Protects power IC controllers such as TOPSwitch
®
• Glass passivated junction
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
• Excellent clamping capability
• Available in unidirectional only
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
Mechanical Data
Case:
JEDEC DO-204AL molded plastic body over
passivated junction
Terminals:
Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
The band denotes the cathode, which is positive
with respect to the anode under normal TVS operation
Mounting Position:
Any
Weight:
0.012oz., 0.3g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
54 – 5.5K per 13” paper Reel
(52mm horiz. tape), 16.5K/carton
73 – 3K per horiz. tape & Ammo box, 30K/carton
T
A
= 25
O
C unless otherwise noted.
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Dimensions are in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
Parameter
Steady state power dissipation
(Note 3)
Peak pulse power dissipation
(Note 1, 2, Fig. 1)
Stand-off voltage
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
Symbol
P
M(AV)
P
PPM
V
WM
R
ΘJL
R
ΘJA
T
J
, T
STG
P4KE530
1.0
P4KE550
Unit
W
W
Minimum 300
477
27
75
–55 to +150
495
V
°C/W
°C/W
°C
Electrical Characteristics
Parameter
Minimum breakdown voltage at 100µA
T
A
= 25
O
C unless otherwise noted.
Symbol
V
(BR)
Vc
I
D
P4KE530
530
660
5.0
650
90
7.5
P4KE550
550
Unit
V
V
µA
mV°C
pF
Max. clamping voltage at 400mA, 10/1000µs
-
waveform
Maximum DC reverse leakage current at V
WM
Typical temperature coefficient of V
(BR)
Typical capacitance
(Note 4)
Notes:
(1)
(2)
(3)
(4)
at 0V
at 200V
C
J
Non repetitive current pulse per Fig.3 and derated above 25
O
C per Fig. 2
Peak pulse power waveform is 10/1000µs
Lead temperature at 75
O
C = T
L
Measured at 1MH
Z
Document Number 88366
14-Dec-01
www.vishay.com
1
P4KE530 and P4KE550
Vishay Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
P
PPM
– Peak Pulse Power (kW)
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
Fig. 2 – Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
50
1
25
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
0
25
50
75
100
125
150
175
td – Pulse Width (sec.)
T
A
– Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
I
PPM
– Peak Pulse Current, % I
RSM
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
Half Value – IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t – Time (ms)
Application Notes
•
Respect Thermal Resistance (PCB Layout) – as the temperature coefficient also contributes to the clamping voltage.
•
Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature.
Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power.
•
Clamping voltage is influenced by internal resistance – design approximation is 7V per 100mA slope.
•
Keep temperature of TVS lower than TOPSwitch
as a recommendation.
•
Maximum current is determined by the maximum T
J
and can be higher than 300mA.
Contact supplier for different clamping voltage / current arrangements.
•
Minimum breakdown voltage can be customized for other applications. Contact supplier
•
TOPSwitch
is a registered trademark of Power Integrations, Inc.
www.vishay.com
2
Document Number 88366
14-Dec-01
Analog electronics
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