Power Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Motorola ( NXP ) |
| Reach Compliance Code | unknown |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 50 A |
| Collector-emitter maximum voltage | 125 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 10 |
| JEDEC-95 code | TO-204AE |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 250 W |
| Maximum power dissipation(Abs) | 250 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 1350 ns |
| BUV60 | BUV18A | BUS50 | MJ11019 | MJ13101 | BUX40 | |
|---|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin | Power Bipolar Transistor, 80A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin | Power Bipolar Transistor, 70A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin | Power Bipolar Transistor, 15A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin | Transistor | Power Bipolar Transistor, 20A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin |
| Maker | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| Maximum collector current (IC) | 50 A | 80 A | 70 A | 15 A | 20 A | 20 A |
| Configuration | SINGLE | SINGLE | SINGLE WITH BUILT-IN DIODE | DARLINGTON | Single | SINGLE |
| Minimum DC current gain (hFE) | 10 | 10 | 15 | 100 | 8 | 8 |
| Polarity/channel type | NPN | NPN | NPN | PNP | NPN | NPN |
| surface mount | NO | NO | NO | NO | NO | NO |
| Is it Rohs certified? | incompatible | - | incompatible | incompatible | incompatible | incompatible |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | - | COLLECTOR |
| Collector-emitter maximum voltage | 125 V | 100 V | 125 V | 250 V | - | 125 V |
| JEDEC-95 code | TO-204AE | TO-204AE | TO-204AE | TO-204AA | - | TO-204AA |
| JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | - | O-MBFM-P2 |
| JESD-609 code | e0 | - | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | - | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | - | 2 |
| Maximum operating temperature | 175 °C | - | 200 °C | 175 °C | 200 °C | - |
| Package body material | METAL | METAL | METAL | METAL | - | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | - | ROUND |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT |
| Maximum power consumption environment | 250 W | 250 W | - | 175 W | - | 120 W |
| Maximum power dissipation(Abs) | 250 W | - | 350 W | 175 W | 175 W | - |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
| Terminal surface | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | - | PIN/PEG |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | - | BOTTOM |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | - | SILICON |
| Base Number Matches | - | 1 | 1 | 1 | 1 | - |
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