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BUX40

Description
Power Bipolar Transistor, 20A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size65KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BUX40 Overview

Power Bipolar Transistor, 20A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

BUX40 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)20 A
Collector-emitter maximum voltage125 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment120 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
Maximum off time (toff)1250 ns

BUX40 Related Products

BUX40 BUV18A BUS50 MJ11019 MJ13101 BUV60
Description Power Bipolar Transistor, 20A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin Power Bipolar Transistor, 80A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin Power Bipolar Transistor, 70A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin Power Bipolar Transistor, 15A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin Transistor Power Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 20 A 80 A 70 A 15 A 20 A 50 A
Configuration SINGLE SINGLE SINGLE WITH BUILT-IN DIODE DARLINGTON Single SINGLE
Minimum DC current gain (hFE) 8 10 15 100 8 10
Polarity/channel type NPN NPN NPN PNP NPN NPN
surface mount NO NO NO NO NO NO
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR - COLLECTOR
Collector-emitter maximum voltage 125 V 100 V 125 V 250 V - 125 V
JEDEC-95 code TO-204AA TO-204AE TO-204AE TO-204AA - TO-204AE
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 - O-MBFM-P2
JESD-609 code e0 - e0 e0 e0 e0
Number of components 1 1 1 1 - 1
Number of terminals 2 2 2 2 - 2
Package body material METAL METAL METAL METAL - METAL
Package shape ROUND ROUND ROUND ROUND - ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
Maximum power consumption environment 120 W 250 W - 175 W - 250 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG - PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM - BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON - SILICON
Base Number Matches - 1 1 1 1 -
Maximum operating temperature - - 200 °C 175 °C 200 °C 175 °C
Maximum power dissipation(Abs) - - 350 W 175 W 175 W 250 W
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