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BUV18A

Description
Power Bipolar Transistor, 80A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size65KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BUV18A Overview

Power Bipolar Transistor, 80A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin

BUV18A Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)80 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment250 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)1350 ns
Base Number Matches1

BUV18A Related Products

BUV18A BUS50 MJ11019 MJ13101 BUV60 BUX40
Description Power Bipolar Transistor, 80A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin Power Bipolar Transistor, 70A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin Power Bipolar Transistor, 15A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin Transistor Power Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin Power Bipolar Transistor, 20A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 80 A 70 A 15 A 20 A 50 A 20 A
Configuration SINGLE SINGLE WITH BUILT-IN DIODE DARLINGTON Single SINGLE SINGLE
Minimum DC current gain (hFE) 10 15 100 8 10 8
Polarity/channel type NPN NPN PNP NPN NPN NPN
surface mount NO NO NO NO NO NO
Shell connection COLLECTOR COLLECTOR COLLECTOR - COLLECTOR COLLECTOR
Collector-emitter maximum voltage 100 V 125 V 250 V - 125 V 125 V
JEDEC-95 code TO-204AE TO-204AE TO-204AA - TO-204AE TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 - O-MBFM-P2 O-MBFM-P2
Number of components 1 1 1 - 1 1
Number of terminals 2 2 2 - 2 2
Package body material METAL METAL METAL - METAL METAL
Package shape ROUND ROUND ROUND - ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Maximum power consumption environment 250 W - 175 W - 250 W 120 W
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified
Terminal form PIN/PEG PIN/PEG PIN/PEG - PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM - BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON - SILICON SILICON
Base Number Matches 1 1 1 1 - -
Is it Rohs certified? - incompatible incompatible incompatible incompatible incompatible
JESD-609 code - e0 e0 e0 e0 e0
Maximum operating temperature - 200 °C 175 °C 200 °C 175 °C -
Maximum power dissipation(Abs) - 350 W 175 W 175 W 250 W -
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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