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IRFD313R

Description
Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size172KB,5 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

IRFD313R Overview

Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRFD313R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHarris
package instructionIN-LINE, R-PDIP-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage350 V
Maximum drain current (Abs) (ID)0.3 A
Maximum drain current (ID)0.3 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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