AP50T10GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
30mΩ
37A
S
Description
AP50T10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for high current application due to the low
connection resistance. The through-hole version (AP50T10GJ) is
available for low-profile applications.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
o
Absolute Maximum Ratings@T
j
=25 C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
.
Rating
100
+20
37
23
120
89.2
Units
V
V
A
A
A
W
W
mJ
A
mJ
℃
℃
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
Avalanche Current
1
Repetitive Avalanche Energy
1
Storage Temperature Range
Operating Junction Temperature Range
3
4
2
60
20
8.9
-55 to 150
-55 to 150
Single Pulse Avalanche Energy
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
1.4
62.5
110
Units
℃/W
℃/W
℃/W
1
201411284
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP50T10GH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=24A
V
GS
=5V, I
D
=16A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=24A
V
DS
=80V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=24A
V
DS
=80V
V
GS
=10V
V
DS
=50V
I
D
=24A
R
G
=1Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
Min.
100
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
30
-
-
42
8
19
11
42
26
8.5
190
130
1.7
Max. Units
-
30
70
3
-
25
+100
67
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1840 2940
.
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=24A, V
GS
=0V
I
S
=10A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
40
80
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
4.Starting T
j
=25 C, V
DD
=50V, L=0.3mH, R
G
=25Ω, I
AS
=20A.
o
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP50T10GH/J-HF
100
80
T
C
= 25 C
80
o
10V
7.0V
6.0V
I
D
, Drain Current (A)
60
T
C
= 150
o
C
10V
7.0V
6.0V
I
D
, Drain Current (A)
60
5.0V
40
5.0V
40
V
G
= 4.0V
20
20
V
G
= 4.0V
0
0
4
8
12
16
0
0
4
8
12
16
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
2.4
I
D
=16A
T
C
=25 C
60
o
I
D
=24A
V
G
=10V
2.0
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
50
1.6
40
.
1.2
30
0.8
20
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
20
I
D
=250uA
16
1.6
12
Normalized V
GS(th)
1.4
I
S
(A)
1.2
T
j
=150
o
C
8
T
j
=25
o
C
0.8
4
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP50T10GH/J-HF
f=1.0MHz
12
3000
I
D
= 24 A
10
V
GS
, Gate to Source Voltage (V)
8
6
4
C (pF)
V
DS
= 50 V
V
DS
= 60 V
V
DS
= 80 V
2000
C
iss
1000
2
0
0
10
20
30
40
50
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
I
D
(A)
Operation in this
area limited by
R
DS(ON)
0.2
100us
0.1
10
1
1ms
10ms
100ms
DC
.
0.1
0.05
P
DM
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
T
c
=25 C
Single Pulse
0.1
0.1
1
10
100
1000
o
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP50T10GH/J-HF
MARKING INFORMATION
TO-252
50T10GH
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-251
50T10GJ
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
.
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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