DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N075CUE,NP88N075DUE,NP88N075EUE,NP88N075KUE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
ORDERING INFORMATION
PART NUMBER
NP88N075CUE
NP88N075DUE
NP88N075EUE
PACKAGE
TO-220AB
TO-262
TO-263 (MP-25ZJ)
TO-263 (MP-25ZK)
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)
= 8.5 mΩ MAX. (V
GS
= 10 V, I
D
= 44 A)
•
Low C
iss
: C
iss
= 8200 pF TYP.
5
NP88N075KUE
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
75
±20
±88
±352
288
1.8
175
–55 to +175
69 / 88
450 / 14
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
(TO-262)
Drain Current (Pulse)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Notes 1.
Calculated constant current according to MAX. allowable channel
temperature.
2.
PW
≤
10
µ
s, Duty cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= 35 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.52
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14676EJ5V0DS00 (5th edition)
Date Published December 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
1999, 2000
NP88N075CUE,NP88N075DUE,NP88N075EUE,NP88N075KUE
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 60 V
V
GS
= 10 V
I
D
= 88 A
I
F
= 88 A, V
GS
= 0 V
I
F
= 88 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 75 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
µ
A
V
DS
= 10 V, I
D
= 44 A
V
GS
= 10 V, I
D
= 44 A
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 38 V, I
D
= 44 A
V
GS(on)
= 10 V
R
G
= 0
Ω
2.0
30
3.0
60
6.2
8200
800
440
35
28
105
16
150
30
52
1.0
80
240
8.5
12300
1200
800
77
70
210
40
230
MIN.
TYP.
MAX.
10
±100
4.0
UNIT
µ
A
nA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µs
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D14676EJ5V0DS
NP88N075CUE,NP88N075DUE,NP88N075EUE,NP88N075KUE
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
350
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
0
25
50
75
100 125
150 175
200
100
80
60
40
300
250
200
150
100
50
0
0
25
50
75
100 125
150 175
200
20
0
T
C
- Case Temperature -
˚C
T
C
- Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
100
d
ite )
im 0 V
)
L = 1
I
D(DC)
on S
S(
R
D
t V
G
Po
a
(
Lim wer
10
10
1m
s
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
500
=1
Single Pulse Avalanche Energy - mJ
PW
0
µ
0
µ
450 mJ
400
s
s
I
D
- Drain Current - A
DC
ite Dis
d
sip
a
ms
tio
n
300
10
I
AS
= 69 A
200
1
T
C
= 25˚C
Single Pulse
0.1
0.1
100
1
10
100
14 mJ
0
50
25
88 A
75
100
125
150
175
V
DS -
Drain to Source Voltage - V
Starting T
ch
- Starting Channel Temperature - ˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 83.3˚C/W
10
1
R
th(ch-C)
= 0.52˚C/W
0.1
Single Pulse
T
C
= 25˚C
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
0.01
10
µ
Data Sheet D14676EJ5V0DS
3
NP88N075CUE,NP88N075DUE,NP88N075EUE,NP88N075KUE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
Pulsed
V
DS
= 10 V
I
D
- Drain Current - A
100
I
D
- Drain Current - A
T
A
=
−55˚C
25˚C
75˚C
175˚C
400
300
200
10
V
GS
=10 V
1
100
Pulsed
0
1
2
3
4
0.1
2
3
4
5
6
7
V
GS
- Gate to Source Voltage - V
0
V
DS
- Drain to Source Voltage - V
100
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
20
Pulsed
15
| y
fs
| - Forward Transfer Admittance - S
10
T
A
= 175˚C
75˚C
25˚C
−55˚C
1
10
I
D
= 44 A
5
0.1
V
DS
= 10 V
Pulsed
10
100
0.01
0.01
0.1
1
0
T
A
= 25˚C
0
4
8
12
16
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
15
Pulsed
V
GS
= 10 V
V
GS(th)
- Gate to Source Threshold Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
= V
GS
I
D
= 250
µ
A
4
10
3
2
5
1
0
1
10
100
1000
I
D
- Drain Current - A
0
−50
0
50
100
150
T
ch
- Channel Temperature - ˚C
4
Data Sheet D14676EJ5V0DS
NP88N075CUE,NP88N075DUE,NP88N075EUE,NP88N075KUE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
18
16
14
12
10
8
6
4
2
0
−50
0
50
100
150
V
GS
= 10 V
I
D
= 44 A
1000
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
V
GS
= 10 V
100
V
GS
= 0 V
10
I
SD
- Diode Forward Current - A
1
0.1
0
0.5
1.0
1.5
T
ch
- Channel Temperature - ˚C
V
F(S-D)
- Body Diode Forward Voltage - V
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
Figure15. SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
C
iss
t
f
t
d(off)
100
t
d(on)
t
r
10
V
DD
= 38 V
V
GS
= 10 V
R
G
= 10
Ω
10000
1000
C
oss
C
rss
100
0.1
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
V
DS
- Drain to Source Voltage - V
10
V
GS
- Gate to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
80
100
V
DD
= 60 V
38 V
15 V
8
V
GS
6
60
40
4
10
20
V
DS
0
0
40
80
Q
G
- Gate Charge - nC
I
D
= 88 A
120
2
0
160
1
0.1
di/dt = 100 A/
µ
s
V
GS
= 0 V
1
10
100
I
F
- Drain Current - A
Data Sheet D14676EJ5V0DS
5
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