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NP88N075DUE-AZ

Description
88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size76KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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NP88N075DUE-AZ Overview

88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN

NP88N075DUE-AZ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)450 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage75 V
Maximum drain current (Abs) (ID)88 A
Maximum drain current (ID)88 A
Maximum drain-source on-resistance0.0085 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)288 W
Maximum pulsed drain current (IDM)352 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N075CUE,NP88N075DUE,NP88N075EUE,NP88N075KUE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
ORDERING INFORMATION
PART NUMBER
NP88N075CUE
NP88N075DUE
NP88N075EUE
PACKAGE
TO-220AB
TO-262
TO-263 (MP-25ZJ)
TO-263 (MP-25ZK)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
R
DS(on)
= 8.5 mΩ MAX. (V
GS
= 10 V, I
D
= 44 A)
Low C
iss
: C
iss
= 8200 pF TYP.
5
NP88N075KUE
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
75
±20
±88
±352
288
1.8
175
–55 to +175
69 / 88
450 / 14
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
(TO-262)
Drain Current (Pulse)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Notes 1.
Calculated constant current according to MAX. allowable channel
temperature.
2.
PW
10
µ
s, Duty cycle
1%
3.
Starting T
ch
= 25°C, V
DD
= 35 V, R
G
= 25
, V
GS
= 20
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.52
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14676EJ5V0DS00 (5th edition)
Date Published December 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
1999, 2000

NP88N075DUE-AZ Related Products

NP88N075DUE-AZ NP88N075EUE NP88N075CUE NP88N075DUE NP88N075KUE-E2-AZ NP88N075KUE-AZ
Description 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, TO-263, 3 PIN 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN TRANSISTOR,MOSFET,N-CHANNEL,75V V(BR)DSS,88A I(D),TO-263AB 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, TO-263, 3 PIN
Is it Rohs certified? conform to incompatible incompatible incompatible conform to conform to
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code compliant compliant unknown compliant compliant compliant
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE Single SINGLE WITH BUILT-IN DIODE
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
surface mount NO YES NO NO YES YES
Parts packaging code TO-262AA D2PAK TO-220AB TO-262AA - D2PAK
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3 - SMALL OUTLINE, R-PSSO-G2
Contacts 3 4 3 3 - 4
ECCN code EAR99 EAR99 EAR99 EAR99 - EAR99
Avalanche Energy Efficiency Rating (Eas) 450 mJ 450 mJ 450 mJ 450 mJ - 450 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN - DRAIN
Minimum drain-source breakdown voltage 75 V 75 V 75 V 75 V - 75 V
Maximum drain current (Abs) (ID) 88 A 88 A 88 A 88 A 88 A -
Maximum drain current (ID) 88 A 88 A 88 A 88 A - 88 A
Maximum drain-source on-resistance 0.0085 Ω 0.0085 Ω 0.0085 Ω 0.0085 Ω - 0.0085 Ω
JEDEC-95 code TO-262AA TO-263AB TO-220AB TO-262AA - TO-263AB
JESD-30 code R-PSIP-T3 R-PSSO-G2 R-PSFM-T3 R-PSIP-T3 - R-PSSO-G2
Number of components 1 1 1 1 - 1
Number of terminals 3 2 3 3 - 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
Package form IN-LINE SMALL OUTLINE FLANGE MOUNT IN-LINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - 260
Maximum power dissipation(Abs) 288 W 288 W 288 W 288 W 288 W -
Maximum pulsed drain current (IDM) 352 A 352 A 352 A 352 A - 352 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
Terminal form THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE - GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON - SILICON
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