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NP88N075KUE-AZ

Description
88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, TO-263, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size76KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance  
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NP88N075KUE-AZ Overview

88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, TO-263, 3 PIN

NP88N075KUE-AZ Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)450 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage75 V
Maximum drain current (ID)88 A
Maximum drain-source on-resistance0.0085 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)352 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N075CUE,NP88N075DUE,NP88N075EUE,NP88N075KUE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
ORDERING INFORMATION
PART NUMBER
NP88N075CUE
NP88N075DUE
NP88N075EUE
PACKAGE
TO-220AB
TO-262
TO-263 (MP-25ZJ)
TO-263 (MP-25ZK)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
R
DS(on)
= 8.5 mΩ MAX. (V
GS
= 10 V, I
D
= 44 A)
Low C
iss
: C
iss
= 8200 pF TYP.
5
NP88N075KUE
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
75
±20
±88
±352
288
1.8
175
–55 to +175
69 / 88
450 / 14
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
(TO-262)
Drain Current (Pulse)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Notes 1.
Calculated constant current according to MAX. allowable channel
temperature.
2.
PW
10
µ
s, Duty cycle
1%
3.
Starting T
ch
= 25°C, V
DD
= 35 V, R
G
= 25
, V
GS
= 20
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.52
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14676EJ5V0DS00 (5th edition)
Date Published December 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
1999, 2000

NP88N075KUE-AZ Related Products

NP88N075KUE-AZ NP88N075EUE NP88N075CUE NP88N075DUE NP88N075DUE-AZ NP88N075KUE-E2-AZ
Description 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, TO-263, 3 PIN 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, TO-263, 3 PIN 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN TRANSISTOR,MOSFET,N-CHANNEL,75V V(BR)DSS,88A I(D),TO-263AB
Is it Rohs certified? conform to incompatible incompatible incompatible conform to conform to
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code compliant compliant unknown compliant compliant compliant
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE Single
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
surface mount YES YES NO NO NO YES
Is it lead-free? Lead free Contains lead Contains lead Contains lead - -
Parts packaging code D2PAK D2PAK TO-220AB TO-262AA TO-262AA -
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 -
Contacts 4 4 3 3 3 -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 -
Avalanche Energy Efficiency Rating (Eas) 450 mJ 450 mJ 450 mJ 450 mJ 450 mJ -
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN -
Minimum drain-source breakdown voltage 75 V 75 V 75 V 75 V 75 V -
Maximum drain current (ID) 88 A 88 A 88 A 88 A 88 A -
Maximum drain-source on-resistance 0.0085 Ω 0.0085 Ω 0.0085 Ω 0.0085 Ω 0.0085 Ω -
JEDEC-95 code TO-263AB TO-263AB TO-220AB TO-262AA TO-262AA -
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSFM-T3 R-PSIP-T3 R-PSIP-T3 -
Number of components 1 1 1 1 1 -
Number of terminals 2 2 3 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT IN-LINE IN-LINE -
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 260 -
Maximum pulsed drain current (IDM) 352 A 352 A 352 A 352 A 352 A -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Terminal form GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON SILICON -
Maximum drain current (Abs) (ID) - 88 A 88 A 88 A 88 A 88 A
Maximum operating temperature - 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum power dissipation(Abs) - 288 W 288 W 288 W 288 W 288 W
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