2N3890 datasheet, PDF - EEWORLD Datasheet

2N3890: DescriptionSilicon Controlled Rectifier, 175000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-93,; CategoryAnalog mixed-signal IC Trigger device; File Size225KB，4 Pages; ManufacturerSemitronics Corp.; Related ProductsFound16parts with similar functions to 2N3890

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2N3890 Overview

Silicon Controlled Rectifier, 175000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-93,

Parameter Name	Attribute value
Reach Compliance Code	unknow
Configuration	SINGLE
Maximum DC gate trigger current	400 mA
Maximum DC gate trigger voltage	4 V
Maximum holding current	200 mA
JEDEC-95 code	TO-93
JESD-30 code	O-MUPM-H3
Maximum leakage current	15 mA
On-state non-repetitive peak current	4500 A
Number of components	1
Number of terminals	3
Maximum on-state current	175000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Certification status	Not Qualified
Off-state repetitive peak voltage	600 V
Repeated peak reverse voltage	600 V
surface mount	NO
Terminal form	HIGH CURRENT CABLE
Terminal location	UPPER
Trigger device type	SCR
Base Number Matches	1

Part Number	Manufacturer	Description
2N3890	POWEREX	Phase Control SCR 175 Amoeres Average 1200 Volts
2N6171	Digitron	SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING TRIODE THYRISTOR
15104GOAE3	Microsemi	Silicon Controlled Rectifier, 235A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
15106GOAE3	Microsemi	Silicon Controlled Rectifier, 235A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
NTE5582	NTE	Silicon Controlled Rectifier, 235.5A I(T)RMS, 275000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-93,
NTE5562	NTE	Silicon Controlled Rectifiers (SCR’s)
150C60BE3	Microsemi	Silicon Controlled Rectifier, 235A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
2N3888	New Jersey Semiconductor	PHASE CONTROL SCR
2N6167	Semitronics Corp	Silicon Controlled Rectifier, 20A I(T)RMS, 6500mA I(T), 100V V(DRM), 100V V(RRM), 1 Element
SKT130/06C	SEMIKRON	Silicon Controlled Rectifier, 204.1A I(T)RMS, 130000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209,
15104GOA	Microsemi	Silicon Controlled Rectifier, 235A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
2N3889	POWEREX	Phase Control SCR 175 Amoeres Average 1200 Volts
MCR230A3	NXP(恩智浦)	SILICON CONTROLLED RECTIFIER,100V V(DRM),25A I(T),TO-208VAR1/4
SIPS120	Hutson Industries	Silicon Controlled Rectifier, 20A I(T)RMS, 20000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element
2N3887	New Jersey Semiconductor	PHASE CONTROL SCR
15106GOA	Microsemi	SILICON CONTROLLED RECTIFIER,200V V(DRM),235A I(T),TO-209AB

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