2SK2215-01L,S
FAP-IIA Series
> Features
-
-
-
-
-
-
-
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
V
GS
= ± 30V Guarantee
Avalanche Proof
N-channel MOS-FET
600V
1,2Ω
8A
80W
> Outline Drawing
> Applications
-
-
-
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage (R
GS
=20KΩ)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
V
DGR
I
D
I
D(puls)
V
GS
P
D
T
ch
T
stg
Rating
600
600
8
32
±30
80
150
-55 ~ +150
Unit
V
V
A
A
V
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
I
I
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
DR
DRM
SD
rr
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS=
V
GS
V
DS
=600V
T
ch
=25°C
V
GS
=0V
T
ch
=125°C
V
GS
=±30V
V
DS
=0V
I
D
=4A
V
GS
=10V
I
D
=4A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V
I
D
=8A
V
GS
=10V
R
GS
=10
Ω
T
ch
=25°C
L = 100µH
T
C
=25°C
T
C
=25°C
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
600
2,5
Typ.
3,0
10
0,2
10
1
8
1500
140
30
20
30
90
50
Max.
3,5
500
1,0
100
1,2
2200
210
45
30
45
135
75
8
32
1,5
4
8
1,0
450
3
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
125
1,56
Unit
°C/W
°C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
600V
1,2Ω
2SK2215-01L,S
FAP-IIA Series
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
8A
80W
> Characteristics
Typical Output Characteristics
↑
I
D
[A]
1
↑
R
DS(ON)
[Ω]
2
↑
I
D
[A]
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
↑
R
DS(ON)
[Ω]
4
↑
g
fs
[S]
5
↑
V
GS(th)
[V]
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitance vs. V
DS
Typical Input Charge
Forward Characteristics of Reverse Diode
↑
C [nF]
7
↑
V
DS
[V]
8
↑
V
GS
[V]
↑
I
F
[A]
9
V
DS
[V]
→
Q
g
[nC]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
Safe operation area
↑
Z
th(ch-c)
[K/W]
Transient Thermal impedance
↑
P
D
[W]
10
↑
I
D
[A]
12
11
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
FPGA/CPLD
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