HYS72V128220GR-8 datasheet, PDF

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HYS72V128220GR-8: DescriptionSynchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168; Categorystorage storage; File Size159KB，22 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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HYS72V128220GR-8 Overview

Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168

HYS72V128220GR-8 Parametric

Parameter Name	Attribute value
Maker	SIEMENS
Parts packaging code	DIMM
package instruction	,
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	6 ns
JESD-30 code	R-XDMA-N168
memory density	4831838208 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX72
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	DUAL

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3.3V 168 pin Registered SDRAM Modules

64MB, 128MB, 256MB,

512MB & 1GB Densities

•

168 Pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module

for PC and Server main memory applications

One bank 8M x 72, 16M x 72, 32M x 72 and 64M x 72 organisation

two bank 32M x 72 & 128M x 72 organisation

Optimized for ECC applications with very low input capacitances

JEDEC standard Synchronous DRAMs (SDRAM)

Performance:

-8

Clock frequency (max.)

Clock cycle time (min.)

Clock access time (min.)

CAS latency = 3

CAS latency = 2

100

-8B

100

Units

MHz

•

Single +3.3V(± 0.3V ) power supply

Programmable CAS Latency, Burst Length and Wrap Sequence

(Sequential & Interleave)

Auto Refresh (CBR) and Self Refresh

All inputs, outputs are LVTTL compatible

Serial Presence Detect with E

PROM

Utilizes 64M & 256M SDRAMs in TSOPII-54 packages with registers and PLL.

The two bank module uses stacked TSOP54 packages

4096 refresh cycles every 64 ms

Card Size: 133,35 mm x 38.1mm / 43.18mm x 4,00 / 6.50mm with Gold contact pads

This specification largely follows the JEDEC STANDARD 21-C / Release 8 / Section 4.5.7

specification and as far as applicable - INTEL’s “PC SDRAM Registered DIMM Specification”

Rev.1.0 (Feb.98 and Rev.1.1 (Aug. 98).

•

Semiconductor Group

11.98

Preliminary Information

HYS72V8200GR

HYS72V16200GR

HYS72V32200GR

HYS72V32220GR

HYS72V64200GR

HYS72V128220GR

Rev. 1.0/1.1

HYS72V128220GR-8 Related Products

	HYS72V128220GR-8	HYS72V16200GR-8B	HYS72V32200GR-8B	NT5S26400FS14	NTHS0603N06N2701JR	HYS72V32220GR-8	HYS72V32220GR-8B	HYS72V128220GR-8B	HYS72V8200GR-8B
Description	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 16MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168	RESISTOR, METAL FILM, 0.5 W, 1 %, 15 ppm, 2640 ohm, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS COMPLIANT	NTC Thermistor, 2700ohm, Surface Mount, CHIP, 0603	Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168
Reach Compliance Code	unknown	unknown	unknown	unknown	compliant	unknown	unknown	unknown	unknown
Number of terminals	168	168	168	2	2	168	168	168	168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	TUBULAR PACKAGE	RECTANGULAR PACKAGE	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
surface mount	NO	NO	NO	NO	YES	NO	NO	NO	NO
Maker	SIEMENS	SIEMENS	SIEMENS	-	-	SIEMENS	SIEMENS	SIEMENS	SIEMENS
Parts packaging code	DIMM	DIMM	DIMM	-	-	DIMM	DIMM	DIMM	DIMM
Contacts	168	168	168	-	-	168	168	168	168
ECCN code	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	-	-	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	-	-	6 ns	6 ns	6 ns	6 ns
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	-	-	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	4831838208 bit	1207959552 bit	4831838208 bit	-	-	2415919104 bit	2415919104 bit	4831838208 bit	603979776 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	-	-	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	72	72	72	-	-	72	72	72	72
Number of functions	1	1	1	-	-	1	1	1	1
Number of ports	1	1	1	-	-	1	1	1	1
word count	67108864 words	16777216 words	67108864 words	-	-	33554432 words	33554432 words	67108864 words	8388608 words
character code	64000000	16000000	64000000	-	-	32000000	32000000	64000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	155 °C	-	70 °C	70 °C	70 °C	70 °C
organize	64MX72	16MX72	64MX72	-	-	32MX72	32MX72	64MX72	8MX72
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	-	-	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	-	-	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	-	-	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	-	-	3.3 V	3.3 V	3.3 V	3.3 V
technology	CMOS	CMOS	CMOS	METAL FILM	-	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	-	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	-	DUAL ENDED	DUAL	DUAL	DUAL	DUAL

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