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IRFF121R

Description
Power Field-Effect Transistor, 6A I(D), 80V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
CategoryDiscrete semiconductor    The transistor   
File Size181KB,5 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

IRFF121R Overview

Power Field-Effect Transistor, 6A I(D), 80V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

IRFF121R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHarris
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)36 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (Abs) (ID)6 A
Maximum drain current (ID)6 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment20 W
Maximum power dissipation(Abs)20 W
Maximum pulsed drain current (IDM)24 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)170 ns
Maximum opening time (tons)110 ns
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