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MPQ3725

Description
TRANSISTOR 1000 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size34KB,1 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
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MPQ3725 Overview

TRANSISTOR 1000 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116, BIP General Purpose Small Signal

MPQ3725 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
package instructionIN-LINE, R-PDIP-T14
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-based maximum capacity10 pF
Collector-emitter maximum voltage40 V
ConfigurationSEPARATE, 4 ELEMENTS
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-116
JESD-30 codeR-PDIP-T14
JESD-609 codee0
Number of components4
Number of terminals14
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)75 ns
Maximum opening time (tons)40 ns
VCEsat-Max0.45 V

MPQ3725 Related Products

MPQ3725 2N2657 2N2890 TN3725 MPS6561
Description TRANSISTOR 1000 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116, BIP General Purpose Small Signal TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-5 TRANSISTOR NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, TO-39, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN, BIP General Purpose Small Signal TRANSISTOR,BJT,NPN,20V V(BR)CEO,1A I(C),TO-92
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknown compli unknow unknow unknow
Configuration SEPARATE, 4 ELEMENTS Single SINGLE SINGLE Single
Minimum DC current gain (hFE) 25 40 25 60 50
JESD-609 code e0 e0 e0 e0 e0
Maximum operating temperature 150 °C 175 °C 175 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN NPN
surface mount NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 250 MHz 20 MHz 30 MHz 300 MHz 150 MHz
Maker National Semiconductor(TI ) - - National Semiconductor(TI ) National Semiconductor(TI )
package instruction IN-LINE, R-PDIP-T14 - CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-PBCY-T3 ,
Maximum collector current (IC) 1 A 5 A - 1 A 1 A
JEDEC-95 code TO-116 - TO-39 TO-237AA -
JESD-30 code R-PDIP-T14 - O-MBCY-W3 O-PBCY-T3 -
Number of components 4 - 1 1 1
Number of terminals 14 - 3 3 -
Package body material PLASTIC/EPOXY - METAL PLASTIC/EPOXY -
Package shape RECTANGULAR - ROUND ROUND -
Package form IN-LINE - CYLINDRICAL CYLINDRICAL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED -
Certification status Not Qualified - Not Qualified Not Qualified -
Terminal form THROUGH-HOLE - WIRE THROUGH-HOLE -
Terminal location DUAL - BOTTOM BOTTOM -
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED -
Transistor component materials SILICON - SILICON SILICON -
Maximum off time (toff) 75 ns - 15 ns 60 ns -
Maximum power dissipation(Abs) - 1.2 W 0.8 W 2 W 0.625 W

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