TN3725 datasheet, PDF - EEWORLD Datasheet

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TN3725: DescriptionTRANSISTOR 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size34KB，1 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

Stay tuned Parametric Compare

TN3725 Overview

TRANSISTOR 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN, BIP General Purpose Small Signal

TN3725 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	HIGH SPEED SATURATED SWITCHING
Maximum collector current (IC)	1 A
Collector-based maximum capacity	10 pF
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-237AA
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Maximum off time (toff)	60 ns
Maximum opening time (tons)	35 ns
VCEsat-Max	0.95 V

TN3725 Related Products

	TN3725	2N2657	2N2890	MPQ3725	MPS6561
Description	TRANSISTOR 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-5	TRANSISTOR NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, TO-39, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 1000 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116, BIP General Purpose Small Signal	TRANSISTOR,BJT,NPN,20V V(BR)CEO,1A I(C),TO-92
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknow	compli	unknow	unknown	unknow
Configuration	SINGLE	Single	SINGLE	SEPARATE, 4 ELEMENTS	Single
Minimum DC current gain (hFE)	60	40	25	25	50
JESD-609 code	e0	e0	e0	e0	e0
Maximum operating temperature	150 °C	175 °C	175 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	300 MHz	20 MHz	30 MHz	250 MHz	150 MHz
Maker	National Semiconductor（TI ）	-	-	National Semiconductor（TI ）	National Semiconductor（TI ）
package instruction	CYLINDRICAL, O-PBCY-T3	-	CYLINDRICAL, O-MBCY-W3	IN-LINE, R-PDIP-T14	,
Maximum collector current (IC)	1 A	5 A	-	1 A	1 A
JEDEC-95 code	TO-237AA	-	TO-39	TO-116	-
JESD-30 code	O-PBCY-T3	-	O-MBCY-W3	R-PDIP-T14	-
Number of components	1	-	1	4	1
Number of terminals	3	-	3	14	-
Package body material	PLASTIC/EPOXY	-	METAL	PLASTIC/EPOXY	-
Package shape	ROUND	-	ROUND	RECTANGULAR	-
Package form	CYLINDRICAL	-	CYLINDRICAL	IN-LINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-
Maximum power dissipation(Abs)	2 W	1.2 W	0.8 W	-	0.625 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	-
Terminal form	THROUGH-HOLE	-	WIRE	THROUGH-HOLE	-
Terminal location	BOTTOM	-	BOTTOM	DUAL	-
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-
Transistor component materials	SILICON	-	SILICON	SILICON	-
Maximum off time (toff)	60 ns	-	15 ns	75 ns	-

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