TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-5
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | compli |
| Maximum collector current (IC) | 5 A |
| Configuration | Single |
| Minimum DC current gain (hFE) | 40 |
| JESD-609 code | e0 |
| Maximum operating temperature | 175 °C |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 1.2 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Nominal transition frequency (fT) | 20 MHz |
| Base Number Matches | 1 |
| 2N2657 | 2N2890 | MPQ3725 | TN3725 | MPS6561 | |
|---|---|---|---|---|---|
| Description | TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-5 | TRANSISTOR NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, TO-39, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR 1000 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116, BIP General Purpose Small Signal | TRANSISTOR 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR,BJT,NPN,20V V(BR)CEO,1A I(C),TO-92 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | compli | unknow | unknown | unknow | unknow |
| Configuration | Single | SINGLE | SEPARATE, 4 ELEMENTS | SINGLE | Single |
| Minimum DC current gain (hFE) | 40 | 25 | 25 | 60 | 50 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 |
| Maximum operating temperature | 175 °C | 175 °C | 150 °C | 150 °C | 150 °C |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN |
| surface mount | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Nominal transition frequency (fT) | 20 MHz | 30 MHz | 250 MHz | 300 MHz | 150 MHz |
| Maximum collector current (IC) | 5 A | - | 1 A | 1 A | 1 A |
| Maximum power dissipation(Abs) | 1.2 W | 0.8 W | - | 2 W | 0.625 W |
| package instruction | - | CYLINDRICAL, O-MBCY-W3 | IN-LINE, R-PDIP-T14 | CYLINDRICAL, O-PBCY-T3 | , |
| JEDEC-95 code | - | TO-39 | TO-116 | TO-237AA | - |
| JESD-30 code | - | O-MBCY-W3 | R-PDIP-T14 | O-PBCY-T3 | - |
| Number of components | - | 1 | 4 | 1 | 1 |
| Number of terminals | - | 3 | 14 | 3 | - |
| Package body material | - | METAL | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| Package shape | - | ROUND | RECTANGULAR | ROUND | - |
| Package form | - | CYLINDRICAL | IN-LINE | CYLINDRICAL | - |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| Certification status | - | Not Qualified | Not Qualified | Not Qualified | - |
| Terminal form | - | WIRE | THROUGH-HOLE | THROUGH-HOLE | - |
| Terminal location | - | BOTTOM | DUAL | BOTTOM | - |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| Transistor component materials | - | SILICON | SILICON | SILICON | - |
| Maximum off time (toff) | - | 15 ns | 75 ns | 60 ns | - |
| Maker | - | - | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） |
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