2N2890 datasheet, PDF - EEWORLD Datasheet

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2N2890: DescriptionTRANSISTOR NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, TO-39, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size34KB，1 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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2N2890 Overview

TRANSISTOR NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, TO-39, 3 PIN, BIP General Purpose Small Signal

2N2890 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Maximum off time (toff)	15 ns
Base Number Matches	1

2N2890 Related Products

	2N2890	2N2657	MPQ3725	TN3725	MPS6561
Description	TRANSISTOR NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, TO-39, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-5	TRANSISTOR 1000 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116, BIP General Purpose Small Signal	TRANSISTOR 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR,BJT,NPN,20V V(BR)CEO,1A I(C),TO-92
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknow	compli	unknown	unknow	unknow
Configuration	SINGLE	Single	SEPARATE, 4 ELEMENTS	SINGLE	Single
Minimum DC current gain (hFE)	25	40	25	60	50
JESD-609 code	e0	e0	e0	e0	e0
Maximum operating temperature	175 °C	175 °C	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	30 MHz	20 MHz	250 MHz	300 MHz	150 MHz
package instruction	CYLINDRICAL, O-MBCY-W3	-	IN-LINE, R-PDIP-T14	CYLINDRICAL, O-PBCY-T3	,
JEDEC-95 code	TO-39	-	TO-116	TO-237AA	-
JESD-30 code	O-MBCY-W3	-	R-PDIP-T14	O-PBCY-T3	-
Number of components	1	-	4	1	1
Number of terminals	3	-	14	3	-
Package body material	METAL	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	ROUND	-	RECTANGULAR	ROUND	-
Package form	CYLINDRICAL	-	IN-LINE	CYLINDRICAL	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-
Maximum power dissipation(Abs)	0.8 W	1.2 W	-	2 W	0.625 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	-
Terminal form	WIRE	-	THROUGH-HOLE	THROUGH-HOLE	-
Terminal location	BOTTOM	-	DUAL	BOTTOM	-
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-
Transistor component materials	SILICON	-	SILICON	SILICON	-
Maximum off time (toff)	15 ns	-	75 ns	60 ns	-
Maximum collector current (IC)	-	5 A	1 A	1 A	1 A
Maker	-	-	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）

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