Microwave Diodes, Integrated Circuits, GaAs FETs, Amplifiers and Mixers
Diodes (continued)
Please reference artwork on previous page.
A g i l e n t
Technologies
Surface Mount RF Schottky Barrier Diodes
Mfr.Õs
Type
Bulk
5082-2800
HSMS-2800-BLK
HSMS-2802-BLK
HSMS-2804-BLK
HSMS-2805-BLK
5082-2810
HSMS-2812-BLK
HSMS-2814-BLK
HSMS-2815-BLK
5082-2835
HSMS-2820-BLK
HSMS-2822-BLK
HSMS-2823-BLK
HSMS-2824-BLK
HSMS-2825-BLK
Tape and
Reel
Ñ
Ñ
HSMS-2802-TR1
Ñ
Ñ
Ñ
HSMS-2812-TR1
Ñ
HSMS-2815-TR1
Ñ
Ñ
HSMS-2822-TR1
Ñ
Ñ
HSMS-2825-TR1
Fig.
Min. V
BR
(V) @
10 µA
I
R
= 100 µA
70
70
70
70
70
20
20
20
20
Ñ
15
15
15
15
15
Max. C
T
(pF)
@ V
R
= 0 V
2.0
2.0
2.0
2.0
2.0
1.2
1.2
1.2
1.2
Ñ
1.0
1.0
1.0
1.0
1.0
Max. V
F
@
1 mA (mV)
f = 100 MHz
I
F
= 10 mA
àI
F
= 5 mA
410
410
400
400
400
400
400
400
400
480
340
340
340
340
340
Surface Mount RF Schottky Barrier Diodes (continued)
Mfr.Õs
Type
Bulk
HSMS-2829-BLK
Tape and
Reel
Ñ
Fig.
Min. V
BR
(V) @
10 µA
I
R
= 100 µA
15
Max. C
T
(pF)
@ V
R
= 0 V
1.0
Max. V
F
@
1 mA (mV)
f = 100 MHz
I
F
= 10 mA
àI
F
= 5 mA
340
1
2
4
3
5
1
4
3
5
1
2
4
6
3
5
7
Surface Mount High Performance Schottky Diodes
DC Electrical Specifications:
T
A
= +25¡C, single diode.
Mfr.Õs
Type
Bulk
HSMS-2850-BLK
Ñ
HSMS-2855-BLK
HSMS-2863-BLK
Tape and
Reel
Ñ
HSMS-2852-TR1
Ñ
Ñ
Max.
Forward
Voltage
V
F
(mV)
IF = 1.0 mA
150
150
150
250
Min.
Breakdown
Voltage
V
BR
(V)
I
R
= 10 µA
250
250
250
350
Typ. C
T
(pF)
@ VR = Ð0.5 to Ð1.0 V
f = 1 MHz
0.30
0.30
0.30
0.25
Fig.
2
4
5
6
Silicon Monolithic Integrated Circuits
Low Noise Amplifiers
Mfr.Õs
Type
INA-02186-BLK
INA-10386-BLK
MSA-0611-BLK
GP @
0.1 GHz
(dB)
31.5
25.0
19.5
Typical specifications at +25¡C case temperature.
GP @
1 GHz
(dB)
28.5
25.0
15.0
NF @
1 GHz
(dB)
2.0
3.7
3.2
P
1dB
(dBm)
+11.0
+11.0
+2.0
Min. Supply
Voltage
(V
cc
)*
5.5
6.0
5.0
Device
Voltage
(V
d
)*
5.5
6.0
3.3
Device
Current
(mA)*
35
50
16
Package
86 Plastic
86 Plastic
SOT-143 SM Plastic
*Refer to schematic drawing. Noise figure at 0.5 GHz.
General Purpose GaAs FETs
Mfr.Õs
Type
ATF-26884-STR
Gate Width
(µm)
250
Typical specifications at +25¡C case temperature.
Optimum
Freq. Range
(GHz)
2.0-16
Test Freq.
(GHz)
12
NF
o
(dB)
2.2
G
a
(dB)
9.0
P
1dB
(dBm)
+18
Package
84 Plastic
High Speed Digital Communications
Variable Gain Control Amplifier
Mfr.Õs
Type
IVA-14208-STR
GP @
(dB)
24 @ 1.0 GHz
Typical specifications at +25¡C case temperature.
Gain
Control Range
(dB)
34 @ 1.0 GHz
3 db
Bandwidth
(GHz)
2.5
P
1dB
@
0.5 GHz
Ñ
Supply
Voltage
(V)
6
Device
Current
(mA)
3.8
Package
SO-8 SM Plastic
13
Wide Dynamic Range Amplifier
Mfr.Õs
Type
MSA-1105-STR
GP @
0.1 GHz
(dB)
12.5
GP @
1 GHz
(dB)
10.5
Typical specifications at +25¡C case temperature.
NF
(dB)
4.2
P
1dB
(dBm)
+17.5
Min. Supply
Voltage
(V
cc
)*
8
Device
Voltage
(V
d
)*
5.5
Device
Current
(mA)*
60
Package
05 Plastic
*Refer to schematic drawing.
Low Noise Amplifier
Mfr.Õs
Type
INA-03184-BLK
Typical specifications at +25¡C case temperature.
GP @
0.1 GHz
(dB)
25.5
GP @
1 GHz
(dB)
25.0
NF @
1 GHz
(dB)
2.6
P
1dB
(dBm)
Ð2.0
Min. Supply
Voltage
(V
cc
)*
4
Device
Voltage
(V
d
)*
4.0
Device
Current
(mA)*
10
Package
84 Plastic
*Refer to schematic drawing.
3-Port Double-Balanced Mixers
Mfr.Õs
Type
IAM-82008-STR
IAM-81008-STR
RF and LO
Freq.
(GHz)
0.05-5.0
0.05-5.0
Typical specifications at +25¡C case temperature.
Active Max. IF
Freq. with Gain
(GHz)
Up to 2.0
Up to 1.0
RF-IF
Gain
(dB)
15.0*
8.5
IP
3
(dBm)
+18*
+3
LO-RF
Iso.
(dB)
22*
30
Supply
Voltage
(V)
10
5
Device
Current
(mA)
55
13
Package
SO-8 SM
SO-8 SM
*Noise figure at 0.1 GHz. Refer to schematic drawing.
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