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2SC3595E

Description
Si, NPN, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size80KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SC3595E Overview

Si, NPN, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN

2SC3595E Parametric

Parameter NameAttribute value
Objectid1481081345
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
YTEOL0
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.2 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)2000 MHz

2SC3595E Related Products

2SC3595E 2SC3595D 2SC3595C
Description Si, NPN, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN Si, NPN, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN Si, NPN, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN
Objectid 1481081345 1481081341 1481081334
Parts packaging code SIP SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 60 40
JEDEC-95 code TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 1.2 W 1.2 W 1.2 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 2000 MHz 2000 MHz 2000 MHz
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