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2SK3697-01

Description
Power Field-Effect Transistor, 42A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size147KB,19 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric View All

2SK3697-01 Overview

Power Field-Effect Transistor, 42A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

2SK3697-01 Parametric

Parameter NameAttribute value
Parts packaging codeTO-247AD
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)828 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)42 A
Maximum drain-source on-resistance0.17 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247AD
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)168 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
DATE
CHECKED
May.-20-'03
SPECIFICATION
May.-20-2003
Power MOSFET
MS5F5476
DWG.NO.
CHECKED
May.-20-'03
DRAWN
May.-20-'03
NAME
Date
Spec. No.
Type Name
Device Name
APPROVED
:
:
:
:
2SK3697-01
MS5F5476
Fuji Electric Co.,Ltd.
Fuji Electric Co.,Ltd.
Matsumoto Factory
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