INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD2033
DESCRIPTION
·Good
Linearity of h
FE
·
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 120V(Min)
·Complement
to Type 2SB1353
APPLICATIONS
·Designed
for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
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VALUE
UNIT
120
V
120
V
5.0
V
1.5
A
1.8
W
20
150
℃
-55~150
℃
P
C
Collector Power Dissipation
@T
C
=25℃
T
J
Junction Temperature
T
stg
Storage Temperature Range
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD2033
TYP.
MAX
UNIT
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 0.1mA; I
E
= 0
120
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA; I
B
= 0
120
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 0.1mA; I
C
= 0
5
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1A; I
B
= 0.1A
B
2.0
V
I
CBO
Collector Cutoff Current
V
CB
= 120V; I
E
= 0
10
μA
I
EBO
Emitter Cutoff Current
h
FE
DC Current Cain
f
T
Current-Gain—Bandwidth Product
h
FE
Classifications
D
60-120
E
100-200
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V
EB
= 5V; I
C
=0
I
C
= 0.1A ; V
CE
= 5V
60
I
C
= 0.1A ; V
CE
= 5V
10
μA
320
50
MHz
160-320
isc Website：www.iscsemi.cn
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