BCW76 datasheet, PDF - EEWORLD Datasheet

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BCW76: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18; CategoryDiscrete semiconductor The transistor; File Size118KB，1 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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BCW76 Overview

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18

BCW76 Parametric

Parameter Name	Attribute value
Maker	Micro Electronics
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	63
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.45 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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BCW76 Related Products

	BCW76	BC514	BC427	BC431	BCW73	BCW75	BCW34	BC612L
Description	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18	Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18	Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-18	Small Signal Bipolar Transistor, 0.6A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18	Small Signal Bipolar Transistor, 0.2A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.8 A	0.2 A	0.5 A	0.8 A	0.6 A	0.8 A	0.6 A	0.2 A
Collector-emitter maximum voltage	45 V	20 V	60 V	60 V	32 V	32 V	45 V	70 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	63	140	20	63	100	63	100	60
JEDEC-95 code	TO-18	TO-92	TO-92	TO-92	TO-18	TO-18	TO-18	TO-92
JESD-30 code	O-MBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-PBCY-W3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Package body material	METAL	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	METAL	METAL	METAL	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	NPN	NPN	PNP	NPN	PNP
Maximum power dissipation(Abs)	0.45 W	0.3 W	0.5 W	0.5 W	0.45 W	0.45 W	0.36 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	200 MHz	50 MHz	100 MHz	100 MHz	100 MHz	150 MHz	200 MHz
Maker	Micro Electronics	Micro Electronics	-	-	Micro Electronics	Micro Electronics	Micro Electronics	Micro Electronics

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