PD-90884D
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
Product Summary
Part Number
IRHN7054
IRHN3054
IRHN4054
IRHN8054
Radiation Level
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
1000K Rads (Si)
IRHN7054
JANSR2N7394U
60V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD-Hard HEXFET
TECHNOLOGY
™
®
R
DS(on)
I
D
QPL Part Number
0.027Ω 35A JANSR2N7394U
0.027Ω 35A JANSF2N7394U
0.027Ω 35A JANSG2N7394U
0.040Ω 35A JANSH2N7394U
SMD-1
International Rectifier’s RAD-Hard
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TM
HEXFET
®
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
300 (5sec)
2.6 (Typical)
35
30
283
150
1.2
±20
500
35
15
3.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
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1
05/15/06
IRHN7054, JANSR2N7394U
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
—
—
2.0
12
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.053
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.027
0.030
4.0
—
25
250
100
-100
200
60
75
27
100
75
75
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 30A
Ã
VGS = 12V, ID = 35A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 30A
Ã
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
VDS = 30V
VDD =30V, ID = 35A
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4100
2000
560
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
35
283
1.4
280
2.2
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 35A, VGS = 0V
Ã
Tj = 25°C, IF = 35A, di/dt
≤
100A/µs
VDD
≤
50V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
6.6
Test Conditions
0.83
—
°C/W
Soldered to a 1 inch square clad PC board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHN7054, JANSR2N7394U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (SMD-1)
Diode Forward Voltage
Ã
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=48V, V
GS
=0V
V
GS
= 12V, I
D
=30A
V
GS
= 12V, I
D
=30A
V
GS
= 0V, IS = 35A
Min
60
2.0
—
—
—
—
—
—
Max
—
4.0
100
-100
25
0.027
0.027
1.4
Min
60
1.25
—
—
—
—
—
—
Max
—
4.5
100
-100
50
0.04
0.04
1.4
1. Part numbers IRHN7054 (JANSR2N7394U) ,IRHN3054 (JANSF2N7394U) and IRHN4054 (JANSG2N7394U)
2. Part number IRHN8054 ( JANSH2N7394U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
LET
(MeV/(mg/cm
2
))
36.8
59.9
Energy
(MeV)
305
345
70
60
50
VDS
40
30
20
10
0
0
-5
-10
VGS
-15
-20
BR
I
Range
V
DS
(V)
(µm)
@
V
GS
=0V @
V
GS
=-5V @
V
GS
=-10V @
V
GS
=-15V
39
60
60
45
40
32.8
40
35
30
25
@
V
GS
=-20V
30
20
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHN7054, JANSR2N7394U
Pre-Irradiation
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
5.0V
10
1
10
20µs PULSE WIDTH
T
J
= 25
°
C
100
5.0V
10
1
10
20µs PULSE WIDTH
T
J
= 150
°
C
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 50A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
100
1.5
T
J
= 150
°
C
1.0
0.5
10
5
6
7
8
V DS = 25V
20µs PULSE WIDTH
9
10
11
12
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHN7054, JANSR2N7394U
8000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 35A
V
DS
= 48V
V
DS
= 30V
16
C, Capacitance (pF)
6000
Ciss
4000
12
Coss
2000
8
4
Crss
0
1
10
100
0
0
40
80
FOR TEST CIRCUIT
SEE FIGURE 13
120
160
200
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
100
100
100us
1ms
10
10
10ms
1
0.4
V
GS
= 0 V
1.0
1.6
2.2
2.8
3.4
4.0
1
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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