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BSP 296
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJA
R
thJS
-55 ... + 150
-55 ... + 150
˚C
≤
70
≤
10
E
55 / 150 / 56
K/W
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Values
typ.
max.
Unit
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 ˚C
V
(BR)DSS
V
100
-
-
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8
I
DSS
1.4
2
Zero gate voltage drain current
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 125 ˚C
V
DS
= 60 V,
V
GS
= 0 V,
T
j
= 25 ˚C
-
-
-
I
GSS
0.1
8
-
1
50
100
µA
nA
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
-
R
DS(on)
10
100
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 1 A
V
GS
= 4.5 V,
I
D
= 1 A
Ω
-
-
0.55
0.95
0.8
1.4
Data Sheet
2
05.99
BSP 296
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 ˚C
I
S
A
-
-
1
Inverse diode direct current,pulsed
T
A
= 25 ˚C
I
SM
-
V
SD
-
4
V
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 2 A,
T
j
= 25 ˚C
-
0.95
1.3
Data Sheet
4
05.99
Power technology
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