NE68739-T1 datasheet, PDF - EEWORLD Datasheet

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NE68739-T1: DescriptionRF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN,; CategoryDiscrete semiconductor The transistor; File Size197KB，21 Pages; ManufacturerNEC Electronics

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NE68739-T1 Overview

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN,

NE68739-T1 Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
Reach Compliance Code	unknown
Other features	LOW NOISE
Shell connection	COLLECTOR
Maximum collector current (IC)	0.03 A
Collector-based maximum capacity	0.8 pF
Collector-emitter maximum voltage	3 V
Configuration	SINGLE
highest frequency band	S BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	10000 MHz

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SURFACE MOUNT NPN SILICON

HIGH FREQUENCY TRANSISTOR

FEATURES

• LOW NOISE:

1.3 dB AT 2.0 GHz

• LOW VOLTAGE OPERATION

• EASY TO MATCH

• HIGH GAIN BANDWIDTH PRODUCT:

of 13 GHz

• AVAILABLE IN SIX LOW COST PLASTIC SURFACE

MOUNT PACKAGE STYLES

18 (SOT 343 STYLE)

NE687

SERIES

19 (3 PIN ULTRA SUPER

MINI MOLD)

ers

DESCRIPTION

mb ot

T E: a r t n u e n

NO g p

gn.

esi

ow tashe ew d

oll

for

he th is d

for ffice

om mend ales o

ELECTRICAL CHARACTERISTICS

om call s

rec se

le a ls:

tai 30

de 87

733

NE 8739

NE 6 8 7 3 9 R

The NE687 series of NPN epitaxial silicon transistors are

designed for low cost, low noise applications. Excellent perfor-

mance at low voltage/low current makes this series an ideal

choice for portable wireless applications at 1.6, 1.9 and 2.4

GHz. The NE687 die is available in six different low cost plastic

surface mount package styles.

30 (SOT 323 STYLE)

33 (SOT 23 STYLE)

39 (SOT 143 STYLE)

= 25°C)

PART NUMBER

EIAJ

REGISTERED NUMBER

PACKAGE OUTLINE

NE68718

2SC5185

NE68719

2SC5186

NE68730

2SC5184

NE68733

2SC5182

SYMBOLS

MIN

21e

39R (SOT 143R STYLE)

NE68739/39R

2SC5183/83R

39/39R

PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

GHz

7.5

8.5

1.3

8.5

140

100

0.4

0.8

625

2.0

21e

CBO

EBO

RE4

TH(J-A)

TH(J-C)

Gain Bandwidth Product at

= 2 V, I

= 20 mA, f = 2.0 GHz

Gain Bandwidth Product at

= 1 V, I

= 10 mA, f = 2.0 GHz

Minimum Noise Figure at

= 2 V, I

= 3 mA, f = 2.0 GHz

Minimum Noise Figure at

= 1 V, I

= 3 mA, f = 2.0 GHz

Insertion Power Gain at

= 2V, I

=20 mA, f = 2.0 GHz

Insertion Power Gain at

= 1V, I

=10 mA, f = 2.0 GHz

Forward Current Gain

= 2 V, I

= 20 mA

Collector Cutoff Current

at V

= 5 V, I

= 0 mA

Emitter Cutoff Current

at V

= 1 V, I

= 0 mA

Feedback Capacitance at

= 2 V, I

= 0 mA, f = 1 MHz

Total Power Dissipation

Thermal Resistance

(Junction to Ambient)

Thermal Resistance

(Junction to Case)

1.3

2.0

1.3

2.0

1.3

2.0

1.3

2.0

8.5

7.5

140

°C/W

0.3

100

0.6

833

0.4

100

0.8

1250

0.4

100

0.8

833

0.4

100

0.8

625

Notes:

3. Pulsed measurement, PW

≤

350

µs,

duty cycle

≤

2%.

1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 4. The emitter terminal should be connected to the ground terminal

2. Electronic Industrial Association of Japan.

of the 3 terminal capacitance bridge.

California Eastern Laboratories

NE68739-T1 Related Products

	NE68739-T1	NE68718-T1	NE68733-T1	NE68739R-T1
Description	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN,
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
Reach Compliance Code	unknown	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.03 A	0.03 A	0.03 A	0.03 A
Collector-based maximum capacity	0.8 pF	0.6 pF	0.8 pF	0.8 pF
Collector-emitter maximum voltage	3 V	3 V	3 V	3 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	S BAND	S BAND	S BAND	S BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G3	R-PDSO-G4
Number of components	1	1	1	1
Number of terminals	4	4	3	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	10000 MHz	13000 MHz	12000 MHz	10000 MHz
Shell connection	COLLECTOR	COLLECTOR	-	COLLECTOR

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