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2N6520
2N6520
High Voltage Transistor
• Collector-Emitter Voltage: V
CEO
= -350V
• Collector Dissipation: P
C
(max)=625mW
• Complement to 2N6517
1
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Derate above 25
Junction Temperature
Storage Temperature
Parameter
1. Emitter 2. Base 3. Collector
Value
-350
-350
-5
-500
-250
0.625
5
50
-55 ~ 150
Units
V
V
V
mA
mA
W
mW/°C
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -250V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
V
CE
= -10V, I
C
= -100mA
V
CE
= -20V, I
C
= -10mA, f=20MHz
V
CB
= -20V, I
E
=0, f=1MHz
V
EB
= -0.5V, I
C
=0, f=1MHz
V
BE
(off)= -2V, V
CC
= -100V
I
C
= -50mA, I
B1
= -10mA
V
CC
= -100V, I
C
= -50mA
I
B1
=I
B2
= -10mA
40
20
30
30
20
15
Min.
-350
-350
-5
-50
-50
Max.
Units
V
V
V
nA
nA
200
200
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
-2
200
6
100
200
3.5
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
V
BE
(on)
f
T
C
ob
C
EB
t
ON
t
OFF
Base-Emitter On Voltage
* Current Gain Bandwidth Product
Output Capacitance
Emitter-Base Capacitance
Turn On Time
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
2N6520
Typical Characteristics
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
1000
-10000
V
CE
= -20V
I
C
= 10 I
B
V
CE
(sat)
h
FE
, DC CURRENT GAIN
100
-1000
V
BE
(sat)
10
-100
1
-1
-10
-100
-1000
-10000
-10
-1
-10
-100
-1000
-10000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
t
D
@ V
BE
(off)=-2.0V
V
CE
(off) = -100V
I
C
/I
B
= 5
o
T
J
=25 C
t
STG
1000
V
CE
(off) = -100V
t[ns] ,TIME
t[ns] ,TIME
t
R
100
t
F
I
C
/I
B
= 5
I
B1
= I
B2
T
J
=25 C
o
100
10
-1
-10
-100
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. Turn-On Time
Figure 4. Turn-Off Time
3.0
2.5
100
R[mV/ C], THERMAL COEFFICIENTS
I
C
/I
B
= 10
o
o
f=1MHz
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-1
-10
-100
C
ib
[pF], C
ob
[pF], CAPACITANCE
-55 C to 125 C
C
ib
R
!
VB
for V
BE
-55 C to 25 C
o
o
10
C
ob
R
θ
VC
for V
CE
(sat)
-55 C to 125 C
o
o
o
1
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Temperature Coefficients
Figure 6. Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
Analog electronics
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