TLC27L4MFK datasheet, PDF - EEWORLD Datasheet

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TLC27L4MFK: DescriptionOperational Amplifier, 4 Func, 12000uV Offset-Max, CMOS, CQCC20, LCC-20; CategoryAnalog mixed-signal IC Amplifier circuit; File Size942KB，43 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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TLC27L4MFK Overview

Operational Amplifier, 4 Func, 12000uV Offset-Max, CMOS, CQCC20, LCC-20

TLC27L4MFK Parametric

Parameter Name	Attribute value
Maker	Rochester Electronics
package instruction	HQCCN,
Reach Compliance Code	unknown
ECCN code	EAR99
Amplifier type	OPERATIONAL AMPLIFIER
Maximum average bias current (IIB)	0.035 µA
Nominal Common Mode Rejection Ratio	97 dB
Maximum input offset voltage	12000 µV
JESD-30 code	S-CQCC-N20
length	8.89 mm
Number of functions	4
Number of terminals	20
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	HQCCN
Package shape	SQUARE
Package form	CHIP CARRIER, HEAT SINK/SLUG
Maximum seat height	2.03 mm
Nominal slew rate	0.04 V/us
Supply voltage upper limit	18 V
Nominal supply voltage (Vsup)	10 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
Nominal Uniform Gain Bandwidth	110 kHz
width	8.89 mm

TLC27L4MFK Preview

TLC27L4, TLC27L4A, TLC27L4B, TLC27L4Y, TLC27L9

LinCMOS™ PRECISION QUAD OPERATIONAL AMPLIFIERS

SLOS053C – OCTOBER 1987 – REVISED AUGUST 1994

description

The TLC27L4 and TLC27L9 quad operational

amplifiers combine a wide range of input offset

voltage grades with low offset voltage drift, high

input impedance, extremely low power, and high

gain.

Percentage of Units – %

NC – No internal connection

DISTRIBUTION OF TLC27L9

INPUT OFFSET VOLTAGE

– 1200

299 Units Tested From 2 Wafer Lots

VDD = 5 V

TA = 25°C

N Package

These devices use Texas instruments silicon-gate

LinCMOS™ technology, which provides offset

voltage stability far exceeding the stability

available with conventional metal-gate pro-

cesses.

The extremely high input impedance, low bias

currents, and low-power consumption make

these cost-effective devices ideal for high-gain,

low- frequency, low-power applications. Four

offset voltage grades are available (C-suffix and

I-suffix types), ranging from the low-cost TLC27L4

(10 mV) to the high-precision TLC27L9 (900

µV).

These advantages, in combination with good

common-mode rejection and supply voltage

rejection, make these devices a good choice for

new state-of-the-art designs as well as for

upgrading existing designs.

LinCMOS is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

– 600

2IN –

2OUT

3OUT

3IN –

600

Trimmed Offset Voltage:

TLC27L9 . . . 900

µV

Max at 25°C,

= 5 V

Input Offset Voltage Drift . . . Typically

0.1

µV/Month,

Including the First 30 Days

Wide Range of Supply Voltages Over

Specified Temperature Range:

0°C to 70°C . . . 3 V to 16 V

– 40°C to 85°C . . . 4 V to 16 V

– 55°C to 125°C . . . 4 V to 16 V

Single-Supply Operation

Common-Mode Input Voltage Range

Extends Below the Negative Rail (C-Suffix,

I-Suffix Types)

Ultra-Low Power . . . Typically 195

µW

at 25°C, V

= 5 V

Output Voltage Range includes Negative

Rail

High Input Impedance . . . 10

Ω

Typ

ESD-Protection Circuitry

Small-Outline Package Option Also

Available in Tape and Reel

Designed-In Latch-Up Immunity

D, J, N, OR PW PACKAGE

(TOP VIEW)

1OUT

1IN –

1IN +

2IN +

2IN –

2OUT

4OUT

4IN –

4IN +

GND

3IN +

3IN –

3OUT

FK PACKAGE

(TOP VIEW)

1IN +

2IN +

3 2 1 20 19

9 10 11 12 13

1IN –

1OUT

4OUT

4IN –

4IN +

GND

3IN +

1200

VIO – Input Offset Voltage –

µV

1994, Texas Instruments Incorporated

POST OFFICE BOX 655303

•

DALLAS, TEXAS 75265

TLC27L4, TLC27L4A, TLC27L4B, TLC27L4Y, TLC27L9

LinCMOS™ PRECISION QUAD OPERATIONAL AMPLIFIERS

SLOS053C – OCTOBER 1987 – REVISED AUGUST 1994

description (continued)

In general, many features associated with bipolar technology are available on LinCMOS

™

operational

amplifiers, without the power penalties of bipolar technology. General applications such as transducer

interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the

TLC27L4 and TLC27L9. The devices also exhibit low voltage single-supply operation and ultra-low power

consumption, making them ideally suited for remote and inaccessible battery-powered applications. The

common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density

system applications.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.

The TLC27L4 and TLC27L9 incorporate internal ESD-protection circuits that prevent functional failures at

voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in

handling these devices, as exposure to ESD may result in the degradation of the device parametric

performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized

for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation from – 55°C to 125°C.

AVAILABLE OPTIONS

PACKAGED DEVICES

VIOmax

AT 25°C

900

µV

0°C to 70°C

2 mV

5 mV

10 mV

900

µV

– 40°C to 85°C

2 mV

5 mV

10 mV

– 55°C to 125°C

900

µV

10 mV

SMALL

OUTLINE

(D)

TLC27L9CD

TLC27L4BCD

TLC27L4ACD

TLC27L4CD

TLC27L9ID

TLC27L4BID

TLC27L4AID

TLC27L4ID

TLC27L9MD

TLC27L4MD

CHIP

CARRIER

(FK)

—

TLC27L9MFK

TLC27L4MFK

CERAMIC

DIP

(J)

—

TLC27L9MJ

TLC27L4MJ

PLASTIC

DIP

(N)

TLC27L9CN

TLC27L4BCN

TLC27L4ACN

TLC27L4CN

TLC27L9IN

TLC27L4BIN

TLC27L4AIN

TLC27L4IN

TLC27L9MN

TLC27L4MN

TSSOP

(PW)

—

TLC27L4CPW

—

CHIP

FORM

(Y)

—

TLC27L4Y

—

The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC27L9CDR).

POST OFFICE BOX 655303

•

DALLAS, TEXAS 75265

TLC27L4, TLC27L4A, TLC27L4B, TLC27L4Y, TLC27L9

LinCMOS™ PRECISION QUAD OPERATIONAL AMPLIFIERS

SLOS053C – OCTOBER 1987 – REVISED AUGUST 1994

equivalent schematic (each amplifier)

VDD

IN –

IN +

OUT

GND

POST OFFICE BOX 655303

•

DALLAS, TEXAS 75265

TLC27L4, TLC27L4A, TLC27L4B, TLC27L4Y, TLC27L9

LinCMOS™ PRECISION QUAD OPERATIONAL AMPLIFIERS

SLOS053C – OCTOBER 1987 – REVISED AUGUST 1994

TLC27L4Y chip information

These chips, when properly assembled, display characteristics similar to the TLC27L4C. Thermal compression

or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with

conductive epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

VDD

(4)

–

(11)

(1)

(2)

(3)

(4)

108

CHIP THICKNESS: 15 TYPICAL

BONDING PADS: 4

4 MINIMUM

TJmax = 150°C

TOLERANCES ARE

10%.

ALL DIMENSIONS ARE IN MILS.

PIN (11) IS INTERNALLY CONNECTED

TO BACKSIDE OF CHIP.

(5)

(6)

(7)

GND

(12)

(13)

4IN +

4IN –

(5)

(6)

(8)

3OUT

2IN +

2IN –

(1)

1OUT

(14)

(13)

(12) (11)

(10)

(9)

(8)

1IN +

1IN –

(3)

(2)

(7)

2OUT

(10)

3IN +

(9)

3IN –

4OUT

(14)

POST OFFICE BOX 655303

•

DALLAS, TEXAS 75265

TLC27L4, TLC27L4A, TLC27L4B, TLC27L4Y, TLC27L9

LinCMOS™ PRECISION QUAD OPERATIONAL AMPLIFIERS

SLOS053C – OCTOBER 1987 – REVISED AUGUST 1994

absolute maximum ratings over operating free-air temperature (unless otherwise noted)

†

Supply voltage, V

(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V

Differential input voltage, V

(see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range, V

(any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to V

Input current, I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5 mA

Output current, I

(each output) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30 mA

Total current into V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 mA

Total current out of GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 mA

Duration of short-circuit current at (or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . unlimited

Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table

Operating free-air temperature, T

: C suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C

I suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 85°C

M suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C

Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C

Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, N, or PW package . . . . . . . . . . . . 260°C

Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: J package . . . . . . . . . . . . . . . . . . . . . 300°C

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.

2. Differential voltages are at IN+ with respect to IN –.

3. The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum

dissipation rating is not exceeded (see application section).

DISSIPATION RATING TABLE

PACKAGE

≤

25°C

POWER RATING

950 mW

1375 mW

1575 mW

700 mW

DERATING FACTOR

ABOVE TA = 25°C

7.6 mW/°C

11.0 mW/°C

12.6 mW/°C

5.6 mW/°C

TA = 70°C

POWER RATING

608 mW

880 mW

1008 mW

448 mW

TA = 85°C

POWER RATING

494 mW

715 mW

819 mW

—

TA = 125°C

POWER RATING

—

275 mW

—

recommended operating conditions

C SUFFIX

MIN

Supply voltage, VDD

Common-mode

Common mode input voltage, VIC

voltage

Operating free-air temperature, TA

VDD = 5 V

VDD = 10 V

– 0.2

MAX

3.5

8.5

I SUFFIX

MIN

– 0.2

– 40

MAX

3.5

8.5

M SUFFIX

MIN

– 55

MAX

3.5

8.5

125

UNIT

°C

POST OFFICE BOX 655303

•

DALLAS, TEXAS 75265

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TLC27L4MFK Related Products

	TLC27L4MFK	TLC27L4MN
Description	Operational Amplifier, 4 Func, 12000uV Offset-Max, CMOS, CQCC20, LCC-20	Operational Amplifier, 4 Func, 12000uV Offset-Max, CMOS, PDIP14, PLASTIC, DIP-14
Maker	Rochester Electronics	Rochester Electronics
package instruction	HQCCN,	DIP,
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Amplifier type	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER
Maximum average bias current (IIB)	0.035 µA	0.035 µA
Nominal Common Mode Rejection Ratio	97 dB	97 dB
Maximum input offset voltage	12000 µV	12000 µV
JESD-30 code	S-CQCC-N20	R-PDIP-T14
length	8.89 mm	19.305 mm
Number of functions	4	4
Number of terminals	20	14
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY
encapsulated code	HQCCN	DIP
Package shape	SQUARE	RECTANGULAR
Package form	CHIP CARRIER, HEAT SINK/SLUG	IN-LINE
Maximum seat height	2.03 mm	5.08 mm
Nominal slew rate	0.04 V/us	0.04 V/us
Supply voltage upper limit	18 V	18 V
Nominal supply voltage (Vsup)	10 V	10 V
surface mount	YES	NO
technology	CMOS	CMOS
Temperature level	MILITARY	MILITARY
Terminal form	NO LEAD	THROUGH-HOLE
Terminal pitch	1.27 mm	2.54 mm
Terminal location	QUAD	DUAL
Nominal Uniform Gain Bandwidth	110 kHz	110 kHz
width	8.89 mm	7.62 mm

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