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GBL406

Description
2.4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size170KB,3 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
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GBL406 Overview

2.4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

GBL406 Parametric

Parameter NameAttribute value
MakerWeitron Technology
Reach Compliance Codeunknow
ECCN codeEAR99
Diode typeBRIDGE RECTIFIER DIODE
GBL401 thru GBL410
High Current Glass Passivated
Molding Single-Phase Bridge Rectifier
P b
Lead(Pb)-Free
REVERSE VOLTAGE
100 TO 1000 VOLTS
FORWARD CURRENT
4.0 AMPERE
Features:
* Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
* High current capacity with small package
* Glass passivated chip junctions
* Superior thermal conductivity
* High IFSM
GBL
GBL Outline Dimension
Dim
A
B
C
D
E
F
G
H
I
J
K
L
Min
20.4
3x45˚
1.80
0.90
4.80
10.2
17.37
1.37
3.20
0.80
0.80
0.30
Unit:mm
Max
21.0
-
2.20
1.30
5.20
10.8
18.37
2.37
3.60
1.20
1.20
0.70
WEITRON
http://www.weitron.com.tw
1/3
31-Jan-2011

GBL406 Related Products

GBL406 GBL402 GBL401 GBL404 GBL408 GBL410
Description 2.4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 2.4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code unknow unknow unknow unknow unknow unknow
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maker Weitron Technology Weitron Technology Weitron Technology Weitron Technology - -
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