TLRMK16TAP(K53M1,F
TOSHIBA LED Lamp
InGaAℓP Red Light Emission
TLRMK16TAP(K53M1,F
Panel Circuit Indicator
•
•
•
•
•
•
•
φ5
mm package
InGaAℓP technology
Transparent lens
High intensity light emission
Excellent low current light output
Applications: Various types of information panels, backlightings, etc.
Stopper lead type is also available. TLRMK16TA(F)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Forward current
Reverse voltage
Power dissipation
Operating temperature range
Storage temperature range
Symbol
I
F
(Note 1)
V
R
P
D
T
opr
T
stg
Rating
50
4
125
−40
to 100
−40
to 120
Unit
mA
V
mW
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
4-5AH2
Weight: 0.31 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Forward current derating
80
I
F
– Ta
Allowable forward current
IF (mA)
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Marktech
Optoelectronics
1
2010-03-18
For part availability and ordering information please call Toll Free: 800.984.5337
Website: www.marktechopto.com | Email: info@marktechopto.com
TLRMK16TAP(K53M1,F
Electrical and Optical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Luminous intensity
Peak emission wavelength
Spectral line half width
Dominant wavelength
Symbol
V
F
I
R
I
V
λ
P
∆λ
λ
d
Test Condition
I
F
= 20 mA
V
R
= 4 V
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
(Note 2)
(Note 2)
Min
1.85
⎯
1900
⎯
⎯
620
Typ.
2.15
⎯
5400
636
14
626
Max
2.45
50
10700
⎯
⎯
634
Unit
V
µA
mcd
nm
nm
nm
Note 2: Lamps are classified into the following ranks according to their luminous intensity and forward voltage.
Each packing box includes single Luminous Intensity class.
I
V
_ rank classification
Rank
T
U
V
Unit
Min
1900
3380
6010
mcd
Max
3380
6010
10700
⎯
±22.5%
Accuracy
Forward voltage _ rank classification
Rank
A
B
C
Unit
Min
1.85
2.05
2.25
V
Max
2.05
2.25
2.45
⎯
±0.05V
Accuracy
Precaution
•
•
•
Please be careful of the followings
Soldering temperature: 260°C max
Soldering time: 3 s max
(Soldering portion of lead: up to 1.6 mm from the body of the device)
If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure
that it will not be affected by this IR light.
2
2010-03-18
TLRMK16TAP(K53M1,F
I
F
– V
F
100
Ta = 25°C
30000
Ta
=
25°C
I
V
– I
F
Luminous intensity IV (mcd)
1.8
2.0
2.2
2.4
2.6
2.8
50
(mA)
10000
5000
3000
30
Forward current IF
10
5
3
1000
500
300
1
1.6
100
1
3
5
10
30
50
100
Forward voltage VF
(V)
Forward current IF
(mA)
I
V
– Tc
10
5
1.0
Relative Luminous Intensity
Wavelength
Relative luminous intensity IV
3
Relative luminous intensity
0.8
0.6
1
0.5
0.3
0.4
0.2
0.1
−20
0
20
40
60
80
0
580
600
620
640
660
680
700
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation Pattern
Ta = 25 °C
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
0
0.2
0.4
0.6
0.8
90°
1.0
3
2010-03-18
Embedded System
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