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MY100X

Description
25Amp Fast Recovery Full Wave Bridge Rectifier
CategoryDiscrete semiconductor    diode   
File Size124KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MY100X Overview

25Amp Fast Recovery Full Wave Bridge Rectifier

MY100X Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionO-MUPF-D1
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeO-MUPF-D1
JESD-609 codee0
Maximum non-repetitive peak forward current150 A
Number of components4
Phase1
Number of terminals1
Maximum operating temperature175 °C
Maximum output current25 A
Package body materialMETAL
Package shapeROUND
Package formPRESS FIT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

MY100X Related Products

MY100X MY100X_07 MY300X MY200X MY400X
Description 25Amp Fast Recovery Full Wave Bridge Rectifier 25Amp Fast Recovery Full Wave Bridge Rectifier 25Amp Fast Recovery Full Wave Bridge Rectifier 25Amp Fast Recovery Full Wave Bridge Rectifier 25Amp Fast Recovery Full Wave Bridge Rectifier
Is it lead-free? Contains lead - Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible - conform to conform to conform to
package instruction O-MUPF-D1 - HERMETIC SEALED, GLASS PACAKGE-2 HERMETIC SEALED, GLASS PACAKGE-2 HERMETIC SEALED, GLASS PACAKGE-2
Contacts 2 - 2 2 2
Reach Compliance Code compli - unknow unknow unknow
ECCN code EAR99 - EAR99 EAR99 -
Shell connection ISOLATED - ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON - SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V - 1.3 V 1.3 V 1.3 V
JESD-30 code O-MUPF-D1 - O-MUPF-D1 O-MUPF-D1 O-MUPF-D1
JESD-609 code e0 - e0 e0 e0
Maximum non-repetitive peak forward current 150 A - 150 A 150 A 150 A
Number of components 4 - 4 4 4
Phase 1 - 1 1 1
Number of terminals 1 - 1 1 1
Maximum operating temperature 175 °C - 175 °C 175 °C 175 °C
Maximum output current 25 A - 25 A 25 A 25 A
Package body material METAL - METAL METAL METAL
Package shape ROUND - ROUND ROUND ROUND
Package form PRESS FIT - PRESS FIT PRESS FIT PRESS FIT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V - 300 V 200 V 400 V
surface mount NO - NO NO NO
Terminal surface TIN LEAD - TIN LEAD TIN LEAD TIN LEAD
Terminal form SOLDER LUG - SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER - UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker - - Microsemi Microsemi Microsemi
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