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RN4901TE85R

Description
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size270KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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RN4901TE85R Overview

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN4901TE85R Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN AND PNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max0.3 V
RN4901
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4901
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit in mm
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 4.7kΩ
R2: 4.7kΩ
(Q1, Q2 Common)
JEDEC
2-2J1A
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−50
−50
−10
−100
Unit
V
V
V
mA
JEITA
TOSHIBA
Weight: 6.8mg (typ.)
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
10
100
Unit
V
V
V
mA
1
2007-11-01

RN4901TE85R Related Products

RN4901TE85R RN4901-11 RN4901(TE85R) RN4901TE85N RN4901(TE85L) RN4901TE85L
Description TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Reach Compliance Code unknown unknown unknown unknown unknown unknow
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
Number of components 2 2 2 2 2 2
Number of terminals 6 6 6 6 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Maker Toshiba Semiconductor - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 -
Minimum DC current gain (hFE) 30 - 30 30 30 30
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING
Nominal transition frequency (fT) 250 MHz - 250 MHz 250 MHz 250 MHz 250 MHz
ECCN code - EAR99 EAR99 EAR99 EAR99 -

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