A
DVANCED
L
INEAR
D
EVICES,
I
NC.
ALD1102A/ALD1102B
ALD1102
DUAL P-CHANNEL MATCHED MOSFET PAIR
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
GENERAL DESCRIPTION
The ALD1102 is a monolithic dual P-channel matched transistor pair
intended for a broad range of analog applications. These enhancement-
mode transistors are manufactured with Advanced Linear Devices' en-
hanced ACMOS silicon gate CMOS process.
The ALD1102 offers high input impedance and negative current tempera-
ture coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. Since
these are MOSFET devices, they feature very large (almost infinite) current
gain in a low frequency, or near DC operating environment. When used
with an ALD1101, a dual CMOS analog switch can be constructed. In
addition, the ALD1102 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
The ALD1102 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.
APPLICATIONS
•
•
•
•
•
•
•
•
•
Precision current mirrors
Precision current sources
Analog switches
Choppers
Differential amplifier
input stage
Voltage comparator
Data converters
Sample and Hold
Analog inverter
PIN CONFIGURATION
SOURCE
1
GATE
1
DRAIN
1
NC
1
2
3
4
TOP VIEW
DA, PA, SA PACKAGE
8
7
6
5
SUBSTRATE
SOURCE
2
GATE
2
DRAIN
2
FEATURES
•
•
•
•
•
•
•
•
Low threshold voltage of 0.7V
Low input capacitance
Low Vos grades -- 2mV, 5mV, 10mV
High input impedance -- 10
12
Ω
typical
Low input and output leakage currents
Negative current (I
DS
) temperature coefficient
Enhancement-mode (normally off)
DC current gain 10
9
BLOCK DIAGRAM
ORDERING INFORMATION
Operating Temperature Range*
-55°C to +125°C
0°C to +70°C
0°C to +70°C
8-Pin
CERDIP
Package
8-Pin
Plastic Dip
Package
ALD1102A PA
ALD1102B PA
ALD1102 PA
8-Pin
SOIC
Package
DRAIN 1 (3)
GATE 1 (2)
SOURCE 1 (1)
SUBSTRATE (8)
DRAIN 2 (5)
SOURCE 2 (7)
GATE 2 (6)
ALD1102 DA
ALD1102 SA
* Contact factory for industrial temperature range.
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
4
LOW VOLTAGE OUTPUT
CHARACTERISTICS
DRAIN-SOURCE CURRENT
(mA)
V
BS
= 0V
T
A
= 25°C
2
V
GS
= -12V
-6V
-4V
-2V
0
DRAIN - SOURCE CURRENT
(mA)
-80
-60
V
BS
= 0V
T
A
= 25°C
V
GS
= -12V
-10V
-8V
-6V
-40
-20
-2
-4V
-2V
0
0
-2
-4
-6
-8
-10
-12
DRAIN - SOURCE VOLTAGE (V)
-4
-320
-160
0
160
320
DRAIN -SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE
vs. DRAIN - SOURCE VOLTAGE
FORWARD TRANSCONDUCTANCE
(µmho)
10000
5000
2000
1000
500
200
100
0
-2
-4
-6
-8
-10
-12
T
A
= +25°C
I
DS
= -1mA
T
A
= +125°C
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
-20
DRAIN-SOURCE CURRENT
(µA)
V
BS
= 0V
f = 1KHz
I
DS
= -5mA
V
BS
= 0V
-15
2V
4V
6V
8V
10V
12V
-10
-5
V
GS
= V
DS
T
A
= 25°C
0
0
-0.8
-1.6
-2.4
-3.2
-4.0
DRAIN - SOURCE VOLTAGE (V)
GATE - SOURCE VOLTAGE (V)
R
DS (ON)
vs. GATE - SOURCE VOLTAGE
DRAIN - SOURCE ON RESISTANCE
(Ω)
OFF - DRAIN SOURCE CURRENT
(A)
10000
V
DS
= 0.4V
V
BS
= 0V
1000
T
A
= +125°C
OFF DRAIN - CURRENT vs.
TEMPERATURE
-10
X
10
-6
V
DS
= -12V
V
GS
= V
BS
= 0V
-10
X
10
-9
100
T
A
= +25°C
10
0
-2
-4
-6
-8
-10
-12
-10
X
10
-12
-50
-25
0
+25
+50
+75
+100 +125
GATE - SOURCE VOLTAGE (V)
TEMPERATURE (°C)
ALD1102A/ALD1102B
ALD1102
Advanced Linear Devices
3
Wireless Connectivity
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