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RC28F640C3TC100

Description
Flash, 4MX16, 100ns, PBGA64, BGA-64
Categorystorage    storage   
File Size485KB,76 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Download Datasheet Parametric View All

RC28F640C3TC100 Overview

Flash, 4MX16, 100ns, PBGA64, BGA-64

RC28F640C3TC100 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionBGA-64
Contacts64
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time100 ns
Other featuresUSER-SELECTABLE 3V OR 12V VPP; TOP BOOT BLOCK
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B64
length13 mm
memory density67108864 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,127
Number of terminals64
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA64,8X8,40
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size4K,32K
Maximum standby current0.000005 A
Maximum slew rate0.055 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
switch bitNO
typeNOR TYPE
width10 mm
Base Number Matches1
3-Volt Advanced+ Boot Block Flash
Memory
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)
Preliminary Datasheet
Product Features
Flexible SmartVoltage Technology
— 2.7 V–3.6 V Read/Program/Erase
— 12 V for Fast Production Programming
128-bit Protection Register
— 64-bit Unique Device Identifier
— 64-bit User Programmable OTP Cells
1.65 V–2.5 V or 2.7 V–3.6 V I/O Option
— Reduces Overall System Power
Extended Cycling Capability
— Minimum 100,000 Block Erase Cycles
High Performance
— 2.7 V–3.6 V: 70 ns Max Access Time
Supports Intel
®
Flash Data Integrator
Software
— Flash Memory Manager
— System Interrupt Manager
— Supports Parameter Storage, Streaming
Data (e.g., voice)
Optimized Architecture for Code Plus
Data Storage
— Eight 4-Kword Blocks, Top or Bottom
Locations
— Up to One Hundred-Twenty-Seven 32-
Kword Blocks
— Fast Program Suspend Capability
— Fast Erase Suspend Capability
Automated Word/Byte Program and
Block Erase
— Command User Interface
— Status Registers
Flexible Block Locking
— Lock/Unlock Any Block
— Full Protection on Power-Up
— WP# Pin for Hardware Block Protection
— V
PP
= GND Option
— V
CC
Lockout Voltage
Cross-Compatible Command Support
— Intel Basic Command Set
— Common Flash Interface
Standard Surface Mount Packaging
— 48-Ball CSP Packages
— 64-Ball Easy BGA Packages
— 48-Lead TSOP Package
Low Power Consumption
— 9 mA Typical Read Power
— 7 µ A Typical Standby Power with
Automatic Power Savings Feature
ETOX™ VIII (0.13
µm)
Flash
Technology
— 32- and 64-Mbit
12 V Fast Production Program
Extended Temperature Operation
— –40 °C to +85 °C
ETOX™ VII (0.18
µm)
Flash Technology
— 16-, 32-, 64-Mbit
ETOX™ VI (0.25
µm)
Flash Technology
— 8-, 16- and 32-Mbit
The 3-Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.13
µm
and
0.18
µm
technologies, represents a feature-rich solution for low-power applications. 3-Volt
Advanced+ Boot Block Flash memory devices incorporate low-voltage capability (2.7 V read,
program and erase) with high-speed, low-power operation. Flexible block locking allows any
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290645-012
October 2001

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