Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC4833
DESCRIPTION
・With
ITO-220 package
・Switching
power transistor
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
V
dis
TOR
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
Dielectric strength
Mounting torque
Terminals to case,AC1 minute
(Recommended torque:0.3N·m)
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
5
10
2
4
35
150
-55~150
2
0.5
UNIT
V
V
V
A
A
A
A
W
℃
℃
kV
N·m
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
3.57
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC4833
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
t
on
t
s
t
f
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
At rated volatge
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
I
C
=2.5A;I
B1
=0.5A
I
B2
=1A ,R
L
=60Ω
V
BB2
=4V
At rated volatge
I
C
=2.5A ; V
CE
=2V
I
C
=1mA ; V
CE
=2V
I
C
=0.5A ; V
CE
=10V
10
10
13
0.3
1.3
0.1
MHz
μs
μs
μs
0.1
25
mA
0.1
mA
CONDITIONS
I
C
=0.1A ;I
B
=0
I
C
=2.5A; I
B
=0.5A
I
C
=2.5A; I
B
=0.5A
MIN
400
1.0
1.5
TYP.
MAX
UNIT
V
V
V
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4833
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
JMnic
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