UNISONIC TECHNOLOGIES CO., LTD.
PZT5401
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage: V
CEO
=-150V
* High current gain
APPLICATIONS
* Telephone Switching Circuit
* Amplifier
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen-Free
PZT5401L-x-AA3-R
PZT5401G-x-AA3-R
SOT-223
Note: Pin Assignment: B: Base C: Collector
E: Emitter
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
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Copyright © 2011 Unisonic Technologies Co., LTD.
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QW-R207-013.B
PZT5401
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(T
A
= 25℃, unless otherwise specified)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
RATINGS
-160
-150
-5
-600
2
+150
-40 ~ +150
UNIT
V
V
V
mA
W
℃
℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
V
CBO
I
C
=100μA, I
E
=0
Collector-Emitter Breakdown Voltage
V
CEO
I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage
V
EBO
I
E
=10μA, I
C
=0
Collector Cut-off Current
I
CBO
V
CB
=120V, I
E
=0
Emitter Cut-off Current
I
EBO
V
BE
=-3V, I
C
=0
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
DC Current Gain(note)
h
FE
V
CE
=-5V, I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=-50mA, I
B
=-5mA
Current Gain Bandwidth Product
f
T
V
CE
=-10V, I
C
=-10mA, f=100MHz
Output Capacitance
C
OB
V
CB
=-10V, I
E
=0, f=1MHz
I
C
=-0.25mA, V
CE
=-5V
Noise Figure
N
F
R
S
=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: P
W
<300μs, Duty Cycle<2%
MIN
-160
-150
-5
TYP
MAX
UNIT
V
V
V
nA
nA
-50
-50
80
80
80
400
-0.2
-0.5
-1
-1
400
6.0
8
V
V
MHz
pF
dB
100
CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
B
150-240
C
200-400
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PZT5401
TYPICAL CHARACTERICS
Fig.1 Collector output Capacitance
10
PNP EPITAXIAL SILICON TRANSISTOR
Fig.2 DC current Gain
3
10
Cob,Capacitance (pF)
V
CE
=-5V
f=1MHz
I
E
=0
hFE, DC current Gain
8
2
10
6
4
1
10
2
0
0
-10
1
-10
-10
2
0
10
-1
-10
-10
0
1
-10
-10
2
-10
3
Collector-Base voltage (V)
Ic,Collector current (mA)
Fig.3 Base-Emitter on Voltage
-10 3
1
-10
Fig.4 Saturation voltage
Ic=10*I
B
Ic,Collector current (mA)
V
CE
=-5V
-10 2
Saturation voltage (V)
-10
0
V
BE
(sat)
-10
1
-1
-10
V
CE
(sat)
-2
-10
-10
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1
-10
0
-10
1
-10
-10
2
3
-10
Base-Emitter voltage (V)
Ic,Collector current (mA)
Current Gain-bandwidth product, f
T
(MHz)
Fig.5 Current gain-bandwidth
product
10
3
V
CE
=-10V
2
10
1
10
10
0
0
-10
1
-10
-10
2
3
-10
Ic,Collector current (mA)
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QW-R207-013.B
PZT5401
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R207-013.B
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