BAS86-M
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features low turn-on voltage.
The devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
• Metal-on-silicon Schottky barrier device
which is protected by a PN junction guard
ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9371
Mechanical Data
Case:
MiniMELF SOD-80
Weight:
approx. 31 mg
Cathode band color:
black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/2.5K per 7" reel (8 mm tape), 12.5K/box
Applications
• Applications where a very low forward voltage is
required
Parts Table
Part
BAS86-M
Ordering code
BAS86-M-18 or BAS86-M-08
Type marking
-
Remarks
Tape and reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Continuous reverse voltage
Forward continuous current
Repetitive peak forward current
Power dissipation
1)
1)
Test condition
Symbol
V
R
I
F
Value
50
200
1)
500
1)
200
1)
Unit
V
mA
mA
mW
t
p
< 1 s,
½ ≤
0.5
I
FRM
P
tot
Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Ambient operating temperature
range
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
amb
T
S
Value
300
1)
125
- 65 to + 125
- 65 to +150
Unit
K/W
°C
°C
°C
Valid provided that electrodes are kept at ambient temperature
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Document Number 83402
Rev. 1.0, 13-Jan-11
BAS86-M
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Leakage current
Test condition
I
R
= 10 µA (pulsed)
V
R
= 40 V
Pulse test t
p
< 300 µs,
I
F
= 0.1 mA,
δ
< 2 %
Pulse test t
p
< 300 µs,
I
F
= 1 mA,
δ
< 2 %
Forward voltage
Pulse test t
p
< 300 µs,
I
F
= 10 mA,
δ
< 2 %
Pulse test t
p
< 300 µs,
I
F
= 30 mA,
δ
< 2 %
Pulse test t
p
< 300 µs,
I
F
= 100 mA,
δ
< 2 %
Diode capacitance
Reverse recovery time
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA, I
R
= 10 mA,
I
rr
= 1 mA,
Symbol
V
(BR)
I
R
V
F
V
F
V
F
V
F
V
F
C
D
t
rr
200
275
365
460
700
Min.
50
5
300
380
450
600
900
8
5
Typ.
Max.
Unit
V
µA
mV
mV
mV
mV
mV
pF
ns
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
500
450
400
350
300
250
200
150
100
50
0
25
0.1
R
thJA
= 540 K/W
P
R
- Limit
at
80 % V
R
P
R
- Limit
at 100
% V
R
V
R
= 50
V
P - Reverse Power Dissipation (mW)
R
1000
T
j
= 125 °C
I
F
- Forward Current (A)
100
T
j
= 25 °C
10
1
50
75
100
125
150
15829
0
0.5
1.0
1.5
15827
T
j
- Junction Temperature (°C)
V
F
- Forward
Voltage
(V)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 3. Forward Current vs. Forward Voltage
10000
C
D
- Diode Capacitance (pF)
V
R
=
V
RRM
10
9
8
7
6
5
4
3
2
1
0
50
75
100
125
150
15830
f = 1 MHz
I
R
- Reverse Current (µA)
1000
100
10
1
25
15828
0.1
1
10
100
T
j
- Junction Temperature (°C)
V
R
- Reverse
Voltage
(V)
Figure 2. Reverse Current vs. Junction Temperature
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2
Figure 4. Diode Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following: Document Number 83402
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.0, 13-Jan-11
BAS86-M
Vishay Semiconductors
Package Dimensions
in millimeters (inches):
MiniMELF SOD-80
Cathode indification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap
between
plug and glass can
be
either on cathode or anode side
Foot print recommendation:
2.5 (0.098) max.
1.25 (0.49) min.
1.6 (0.063)
1.4 (0.055)
5 (0.197) ref.
Document no.:6.560-5005.01-4
Rev.
8
- Date: 07.June.2006
96 12070
Document Number 83402
Rev. 1.0, 13-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
2 (0.079) min.
www.vishay.com
3
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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