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IRFMG50UPBF

Description
Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
CategoryDiscrete semiconductor    The transistor   
File Size192KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IRFMG50UPBF Overview

Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

IRFMG50UPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-MSFM-P3
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)860 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)5.6 A
Maximum drain-source on-resistance2.25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeR-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)270 ns
Maximum opening time (tons)74 ns
PD-90711C
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRFMG50
IRFMG50
1000V, N-CHANNEL
HEXFET
MOSFET TECHNOLOGY
®
R
DS(on)
2.0Ω
I
D
5.6A
HEXFET
®
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical parameter
temperature stability. They are well-suited for applications
such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, high energy pulse
circuits, and virtually any application where high reliability
is required. The HEXFET transistor’s totally isolated
package eliminates the need for additional isolating
material between the device and the heatsink. This
improves thermal efficiency and reduces drain capacitance.
TO-254AA
Features:
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
300(0.063in./1.6mm from case for 10 sec)
9.3 (Typical)
5.6
3.5
22.4
150
1.2
±20
860
5.6
15
1.0
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
www.irf.com
1
06/23/08

IRFMG50UPBF Related Products

IRFMG50UPBF IRFMG50 IRFMG50PBF
Description Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA 5.6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
Is it lead-free? Lead free Contains lead Lead free
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, S-XSFM-P3 FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code compliant unknow compliant
Avalanche Energy Efficiency Rating (Eas) 860 mJ 860 mJ 860 mJ
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 1000 V 1000 V 1000 V
Maximum drain current (ID) 5.6 A 5.6 A 5.6 A
Maximum drain-source on-resistance 2.25 Ω 2 Ω 2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA TO-254AA
JESD-30 code R-MSFM-P3 S-XSFM-P3 S-XSFM-P3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material METAL UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 22 A 22.4 A 22 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it Rohs certified? conform to - conform to
Peak Reflow Temperature (Celsius) 260 - NOT SPECIFIED
Maximum power consumption environment 150 W - 150 W
Maximum time at peak reflow temperature 40 - NOT SPECIFIED
Maximum off time (toff) 270 ns - 270 ns
Maximum opening time (tons) 74 ns - 74 ns
Parts packaging code - TO-254AA TO-254AA
Contacts - 3 3
Other features - HIGH RELIABILITY HIGH RELIABILITY
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