IRFMG50PBF datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> IRFMG50PBF

IRFMG50PBF: DescriptionPower Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size192KB，7 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

IRFMG50PBF Overview

Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN

IRFMG50PBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-254AA
package instruction	FLANGE MOUNT, S-XSFM-P3
Contacts	3
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	860 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	5.6 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-XSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	150 W
Maximum pulsed drain current (IDM)	22 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	270 ns
Maximum opening time (tons)	74 ns

Preview

Download Datasheet

View All

PD-90711C

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number

IRFMG50

1000V, N-CHANNEL

HEXFET

MOSFET TECHNOLOGY

DS(on)

2.0Ω

5.6A

HEXFET

MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high transconductance.

HEXFET transistors also feature all of the well-established

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical parameter

temperature stability. They are well-suited for applications

such as switching power supplies, motor controls,

inverters, choppers, audio amplifiers, high energy pulse

circuits, and virtually any application where high reliability

is required. The HEXFET transistor’s totally isolated

package eliminates the need for additional isolating

material between the device and the heatsink. This

improves thermal efficiency and reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C Continuous Drain Current

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

300(0.063in./1.6mm from case for 10 sec)

9.3 (Typical)

5.6

3.5

22.4

150

1.2

±20

860

5.6

1.0

-55 to 150

Units

W/°C

V/ns

°C

www.irf.com

06/23/08

IRFMG50PBF Related Products

	IRFMG50PBF	IRFMG50	IRFMG50UPBF
Description	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN	5.6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Is it lead-free?	Lead free	Contains lead	Lead free
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant	unknow	compliant
Avalanche Energy Efficiency Rating (Eas)	860 mJ	860 mJ	860 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V	1000 V	1000 V
Maximum drain current (ID)	5.6 A	5.6 A	5.6 A
Maximum drain-source on-resistance	2 Ω	2 Ω	2.25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	S-XSFM-P3	S-XSFM-P3	R-MSFM-P3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED	METAL
Package shape	SQUARE	SQUARE	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	22 A	22.4 A	22 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	-	conform to
Parts packaging code	TO-254AA	TO-254AA	-
Contacts	3	3	-
Other features	HIGH RELIABILITY	HIGH RELIABILITY	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	260
Maximum power consumption environment	150 W	-	150 W
Maximum time at peak reflow temperature	NOT SPECIFIED	-	40
Maximum off time (toff)	270 ns	-	270 ns
Maximum opening time (tons)	74 ns	-	74 ns

Recommended Resources

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components