EEWORLDEEWORLDEEWORLD

Part Number

Search

IRL3502LPBF

Description
Power Field-Effect Transistor, 110A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size82KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

IRL3502LPBF Overview

Power Field-Effect Transistor, 110A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IRL3502LPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)110 A
Maximum drain-source on-resistance0.007 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)250
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD 9.1698A
PRELIMINARY
l
l
l
l
IRL3502
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
G
V
DSS
= 20V
R
DS(on)
= 0.007Ω
S
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
I
D
= 110A…
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
110…
67
420
140
1.1
± 10
14
390
64
14
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.89
–––
62
Units
°C/W
11/17/97
Please enlarge the analysis of the topic~~~
[i=s] This post was last edited by paulhyde on 2014-9-15 08:59 [/i] Please enlarge the analysis of the topic~~~...
longway630 Electronics Design Contest
[Zhu Zhaoqi takes you to learn embedded systems] Chapter 2 Section 8 U-Boot-2013.04 startup analysis (4)
1) Call board_init_f function bl board_init_f In fact, board_init_f() is the first C language function executed by U-Boot: void board_init_f(ulong bootflag), which is located in the board.c file in th...
qinkaiabc ARM Technology
Questions about purchasing development boards
I am new to embedded development, and my foundation is relatively weak, especially in the underlying driver hardware. Now I mainly do Qt development, and I am also interested in the underlying hardwar...
zhaofei057 Embedded System
The National Day holiday is over, why are holidays always so short?
I had a seven-day holiday for the National Day. I felt that time passed too quickly. Time passed by unknowingly. There will be no long holidays this year....
吾妻思萌 Talking
Highly recommended! 48 power supply reference designs from ADI
[align=left][b]ADI [font=宋体]的[/font] 48 [font=宋体]款电源参考设计,需要哪款自取哦[/font]~[url=https://ezchina.analog.com/thread/17897]https://ezchina.analog.com/thread/17897[/url][/b][/align][align=left]ADP1046A LLC R...
新人不新 Analog electronics
Wireless Technology Classic Solutions and Tutorials
There are different types of wireless technology, usually distinguished by the way the wireless signal is generated. Currently, the main methods are FM wireless technology, infrared wireless technolog...
Fireflye RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2438  2894  226  1610  588  50  59  5  33  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号