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BZV58C9.1

Description
Zener Diode, 9.05V V(Z), 6.1%, 5W
CategoryDiscrete semiconductor    diode   
File Size68KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

BZV58C9.1 Overview

Zener Diode, 9.05V V(Z), 6.1%, 5W

BZV58C9.1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance2 Ω
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation5 W
Nominal reference voltage9.1 V
surface mountNO
Maximum voltage tolerance6.1%
Working test current150 mA
BL
FEATURES
GALAXY ELECTRICAL
ZENER DIODES
BZV58C8.2 --- BZV58C200
Vz RANGE: 1.0, 3.9 - 200V
POWER DISSIPATION: 5.0 W
Sillcon planar power zener diodes
For use in stabilizing and clipping curcuits with high
power rating.
The zener voltages are graded according to the
international E 12 standard. Smaller voltage tolerances
are avallable upon request.
These diodes are also available in the MELF case with
the type designation ZMY10…ZMY100.
DO - 27
MECHANICAL DATA
Case:DO-27, plastic case
Terminals: solderable per MIL-STD-202, method 208
Polarity: cathode band
Marking: type number
Approx. weight: 1.15 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Zener current (see Table "Characteristics")
VALUE
UNIT
Pow er dissipation at Tamb=25
P
tot
R
thA
T
J
T
s
R
thL
5
(1)
25
(1)
-50---+150
-50---+175
W
Thermal resistance junction to ambient air
/W
Junction temperature
Storage temperature range
Thermal resistance junction to lead
NOTES:
(1) Valid prov ided that leads are kept at ambient temperature at a distance of 10mm f rom case .
8
K/W
www.galaxycn.com
Document Number 0284009
BL
GALAXY ELECTRICAL
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