SMD Type
NPN Transistors
2SC4942-HF
1.70
0.1
Transistors
■
Features
●
High voltage
●
Fast switching speed
●
Complementary transistor with the 2SA1871-HF
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Collector
3.Emitter
0.42 0.1
0.46 0.1
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1 : Pulse :PW
≤
10ms,Duty Cycle
≤
50℅
(Note.1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
600
600
7
1
2
2
150
-55 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Turn-off time
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
t
on
t
stg
t
off
C
ob
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 600V , I
E
= 0
V
EB
= 7V , I
C
=0
I
C
=400 mA, I
B
=80mA
I
C
=400 mA, I
B
=80mA
V
CE
= 5V, I
C
= 100mA
V
CE
= 5V, I
C
= 500mA
I
C
= 0.5 A, V
CC
= 250 V
I
B1
= −I
B2
= 0.1 A
R
L
= 500 Ω
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 5V, I
E
= -50mA
30
5
0.35
0.9
55
10
0.1
4
0.2
15
30
0.5
5
0.5
pF
MHz
us
Min
600
600
7
10
10
1
1.2
120
uA
V
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
2SC4942-A1-HF
30-60
AA1
F
2SC4942-A2-HF
40-80
AA2
F
2SC4942-A3-HF
60-120
AA3
F
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