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SCS220AE2

Description
RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size982KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

SCS220AE2 Overview

RECTIFIER DIODE

SCS220AE2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
Reach Compliance Codecompli
ECCN codeEAR99
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.55 V
Maximum non-repetitive peak forward current31 A
Maximum operating temperature175 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage600 V
surface mountNO
technologySCHOTTKY
SCS220AE2
SiC Schottky Barrier Diode
Outline
Datasheet
TO-247
V
R
I
F
Q
C
Features
1) Shorter recovery time
650V
10A/20A*
15nC(Per leg)
(*Per leg/ Both legs)
(3)
(1) (2)
Inner
circuit
2) Reduced temperature dependence
3) High-speed switching possible
(1) Anode
(2) Cathode
(3) Anode
(1)
(2) (3)
Applications
・PFC
Boost Topology
・Secondary
Side Rectification
・Data
Center
・PV
Power Conditioners
Packaging
specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
30
C
SCS220AE2
Tube
-
-
Absolute
maximum ratings
(T
j
= 25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current *
Surge non-
repetitive forward
current *
3
3
Symbol
V
RM
V
R
(T
c
= 137°C)
I
F
Value
650
650
10/20
38/76
Unit
V
V
A
A
A
A
A
2
As
PW=10ms sinusoidal, T
j
=25°C
PW=10ms sinusoidal, T
j
=150°C
PW=10s square, T
j
=25°C
I
FRM
I
FSM
30/60
150/300
45/91 *
7.2/29
4.5/18
83/160 *
2
175
55
to
175
1
Repetitive peak forward current *
3
i t value
2
*
3
PW=10ms, T
j
=25°C
PW=10ms, T
j
=150°C
i
2
dt
P
D
T
j
T
stg
A
2
s
W
°C
°C
Total power dissipation *
3
Junction temperature
Range of storage temperature
*1 T
c
=100°C, T
j
=150°C, Duty cycle=10% *2 T
c
=25°C *3 Per leg/ Both legs
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
1/5
TSQ50210-SCS220AE2
9.Ma½.2018 - Rev.004

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