., O
ne.
20
STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
3N209
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gale Voltage
Drain Current
Gate Current
Symbol
Value
25
Unit
VDS
VDGI
voG2
ID
'G1R
'G1F
30
30
30
Vdc
Vdc
mAdc
mAdc
TO-72
IQ2R
!
G2f
-10
10
-10
10
300
1.71
Total Device Dissipation
@ T
A
= WC
Derate above 25"C
Lead Temperature, 1/16" From Seated
Surface for 10 seconds
Storage Channel Temperature Range
Operating Channel Temperature
PD
TL
T
sta
mvwc
°C
mW
260
DUAL-GATE MOSFET
UHF COMMUNICATIONS
-65 to
+176
175
•c
•C
Tcnannel
N.CHANNEL—DEPLETION
ELECTRICAL CHARACTERISTICS
OA
-
26'C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
tlQ - 10 /iAdc, VQ!S = -4.0 Vdc, V
G
zS = 4.0 Vdc)
Gate 1 — Source Forward Breakdown Voltage
(|Q1 - 10 mAdc, VG2S = VDS = 0)
Gate 1 — Source Reverse Breakdown Voltage
«G1 - -10mAdc,VG2S - VDS = 0)
Gate 2 — Source Forward Breakdown Voltage
Symbol
Mln
25
7.0
-7,0
IVP
—
—
—
—
—
—
—
22
-22
22
-22
20
Unit
VIBRIDSX
V(BR)G1SSF
Vdc
Vdc
Vdc
Vdc
Vdc
nAdc
VIBRIQISSR
V(BR1G2SSF
V(BR)G2SSR
'G1SSF
'G.ISSR
7.0
-7.0
WGZ - 10 mAdc, VQIS - VDS - <"
Gate 2 — Source Reverie Breakdown Voltage
«G2 = - 10 mAdc, VGIS - VDS = 0)
Gate 1 — Terminal Forward Current
(VGIS - 6.0 Vdc, v
Q
2s - VDS =
Gate 1 — Terminal Reverse Current
o)
—
{VGIS - -«-o Vdc, VQ2S = VDS - °)
(VGIS - -6.0 Vdc, v
G2
g «. VDS - °. TA = IKCC)
Gate 2 — Terminal Forward Current
(VGZS = 8.0 vdc, VGIS = V
DS
= 0)
Gate 2 — Terminal Reverse Current
<VGZS = -6-o Vdc, v
Q1s
= VDS
iv
G
2s = -B-o Vdc, VGIS - VDS
ON CHARACTERISTICS
-
_
!G2SSF
IQ2SSR
-
—
-20
-10
20
nAdc
fiAdc
nAdc
- °>
= o. TA -
1BO
'
C
>
I
-
-20
-10
30
nAdc
»iAdc
Gate 1 — Zero Voltage Drain Current
(VQS - 16 Vdc, VQ,S - 0, V
G2
S - 4.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(Vos • 1
B
Vdc, V
G2
s . 4.0 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Input Capacitance
(VDS - IB Vdc, VQJS - 4.0 Vdc, ID * 5.0 mAdc, f - 1.0 MHz)
Reverse Transfer Capacitance
(VDS •
16
Vdc, V
G
2S = 4.0 Vdc, ID » 6.0 mAdc, f - 1.0 MHz)
Output Capacitance
<Vos - 16 Vdc, V
G
2S - 4.0 Vdc, ID * 6,0 mAdc, f - 1.0 MHz)
IDSS
Vfs
Ciss
Cras
COBS
5.0
—
mAdc
10
—
0.005
0.5
13
3.3
20
7.0
0.03
4.0
mmhos
PF
pF
PF
0.023
2.0
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
3N209
ELECTRICAL CHARACTERISTICS
(continued) (T
A
•--
26'C unless otherwise noted.)
Characteristic
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS - 16 Vdc, VQ2S = 4-° Vde, ID - 10 mAdc, f = 500 MHz)
Common Source Power Gain (Figure 12)
(VDS = 16 Vdc, VQ2S =
4
-°
vd<;
. ID = 10 mAdc. f = 600 MHz)
•Bandwidth
(VDS - 16 Vdc, VQ2S = *•<> Vdc, In = 10 mAdc. f = 600 MHz)
NF
G
ps
BW
—
10
7.0
4.0
13
—
6.0
20
17
dB
Symbol
Mln
TYP
Max
Unit
dB
MHz
FIGURE 1 - MOSFET CIRCUIT SCHEMATIC
TYPICAL SCATTERING
PARAMETERS
FIGURE 2 -BH, INPUT REFLECTION COEFFICIENT
viruu FREQUENCY
330°
340°
360°
0
IP
20°
30°
FIGURE 3 - S,2, REVERSE TRANSMISSION COEFFICIgNT
variut FREQUENCY
30°
20°
10°
0
350°
340°
330°
320°
220°
210°
M0»
Wft
2!0°
200°
190°
180°
170°
160°
110°
150'
170°
1H°
190°
200°
210°
stm32/stm8
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