SMF22 thru SMF210
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE - 20 TO 100 VOLTS CURRENT - 2.0 AMPERES
SMF
.189(4.80)
.173(4.40)
.141(3.60)
.126(3.20)
.011(2.80)
.095(2.40)
.052(1.30)
.043(1.10)
.035(0.90)
TYPICAL
1
2
.056(1.43)
.054(1.38)
0.82MIN
(1.27MIN)
0.87MAX
(2.20MAX)
.009(0.22)
.006(0.15)
0.050MIN
nds
(1.27MIN)
0.201REF
(5.1REF)
minals
FEATURES
package has Underwriters Laboratory
Flammability Classification 94V-O
•
For surface mounted applications
•
Low profile package
•
Built-in strainrelief
•
Metal to silicon rectifier. majority carrier conduction
•
Low power loss,high efficiency
•
High surge capacity
•
High current capacity
•
For use in low voltage high frequency inverters, free wheeling,
and polarity protection applications.
•
High temperaturesoldering guaranteed: 260°C /10 seco
at terminals
•
High temperature soldering : 260
O
C / 10 seconds at ter
•
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
•
Plastic
MECHANICAL DATA
Case JEDEC DO-214AC molded plastic
Terminals Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity Color band denotes cathode end
Standard Package 12mm tape (EIA STD EIA-481)
Weight 0.002 ounce, 0.064gram
MAXIMUM RATIXGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temp. unless otherwise specified
Single phase, half sine wave, 60Hz, resistive or inductive load
For capacitive load, derate current by 20%
SYMBOLS SMF22 SMF23 SMF24 SMF25 SMF26 SMF28 SMF29 SMF210 UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TL (See figure 1)
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed
on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
(Note 1)
Maximum DC Reverse Current (Note 1) Ta= 25°C
at Rated DC Blocking Voltage Ta=100°C
Maximum Thermal Resistance(Note 2)
Operating and Storage Temperature Range TJ
Storage Temperature Range
NOTES:
A.Pulse Test with PW =300µsec, 2% Duty Cycle.
B.Mounted on P.C. Board with 5.0mm2 (.013mm thick) copper pad areas.
V
F
I
R
RθJL
RθJA
T
J
T
STG
0.50
0.70
0.5
10.0
20.0
80.0
-50 to +150
-55 to +150
0.85
V
mA
°C/W
°C
°C
I
FSM
50.0
A
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
2.0
60
42
60
80
56
80
90
64
90
100
71
100
V
V
V
A
www.paceleader.tw
1
SMF22 thru SMF210
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DEVICE CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,
AMPERES
50
TJ = 25
¢J
10
f = 1.0mHz
Vsig = 50Mvp-p
S22- 24
AVERAGE FORWARD RECTIFIED
CURRENT AMPERES
2 .0
1.5
RESISTIVE OR
INDUCTIVE LOAD P.C.
BOARD MOUNTED ON
8.0mm
2
COPPER LAND
AREAS
S25-26
1
1.0
0.5
S28-S200
0.1
0
50
70
90 110 130 150 170 190 210 230
.2
.3
.4
.5
.6
.7
.8
.9
1.0
1.1
LEAD TEMPERATURE,
¢J
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig. 1-FORWARD CURRENT DERATING CURVE
Fig. 2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES
10
CAPACITANCE, pF
T
J
= 100
¢J
1.0
10
TJ = 25
¢J
f = 1.0MHz
Vsig = 50mVp-p
0.1
T
J
= 75
¢J
1
0.1
0.01
T
J
= 25
¢J
0.4
1
S 22-24
S 25-200
4
10
40
80 100
REVERSE VOLTAGE VOLTS
S 22-2 4
S 25-2 00
0.001
20
40
60
80
100
120
140
Fig. 4-TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT,
AMPERES
60
50
40
30
20
10
8.3ms SINGLE HALF SINE-WAVE
JEDEC METHOD
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
Fig. 5-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
www.paceleader.tw
2
MCU
京公网安备 11010802033920号
EEWORLD
