K4G813222B-PC10 datasheet, PDF

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K4G813222B-PC10: DescriptionSynchronous Graphics RAM, 256KX32, 7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, PLASTIC, QFP-100; Categorystorage storage; File Size1MB，49 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4G813222B-PC10 Overview

Synchronous Graphics RAM, 256KX32, 7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, PLASTIC, QFP-100

K4G813222B-PC10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	QFP
package instruction	QFP, QFP100,.7X.9
Contacts	100
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
length	20 mm
memory density	8388608 bit
Memory IC Type	SYNCHRONOUS GRAPHICS RAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	100
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QFP
Encapsulate equivalent code	QFP100,.7X.9
Package shape	RECTANGULAR
Package form	FLATPACK
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	1024
Maximum seat height	3 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.21 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm

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K4G813222B

128K x 32Bit x 2 Banks Synchronous Graphic RAM

FEATURES

•

JEDEC standard 3.3V power supply

LVTTL compatible with multiplexed address

Dual bank / Pulse RAS

MRS cycle with address key programs

-. CAS Latency (2, 3)

-. Burst Length (1, 2, 4, 8 & full page)

-. Burst Type (Sequential & Interleave)

All inputs are sampled at the positive going edge of the

system clock

Burst Read Single-bit Write operation

DQM 0-3 for byte masking

Auto & self refresh

16ms refresh period (1K cycle)

100 Pin PQFP, TQFP (14 x 20 mm)

Reverse Type Package offers the best signal routing

CMOS SGRAM

GENERAL DESCRIPTION

The K4G813222B is 8,388,608 bits synchronous high data

rate Dynamic RAM organized as 2 x 131,072 words by 32 bits,

fabricated with SAMSUNG's high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock. I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst length, and programmable latencies allows the same

device to be useful for a variety of high bandwidth, high perfor-

mance memory system applications.

Write per bit and 8 columns block write improves performance in

graphics systems.

•

ORDERING INFORMATION

Part NO.

K4G813222B-PC70

K4G813222B-PC80

K4G813222B-PC10

K4G813222B-QC70

K4G813222B-QC80

K4G813222B-QC10

* -UC# : Reverse Type PQFP

Max Freq.

143MHz

125MHz

100MHz

143MHz

125MHz

100MHz

Interface

LVTTL

Package

100 PQFP

Graphics Features

• SMRS cycle.

-. Load mask register

-. Load color register

• Write Per Bit(Old Mask)

• Block Write(8 Columns)

LVTTL

100 TQFP

FUNCTIONAL BLOCK DIAGRAM

DQMi

BLOCK

WRITE

CONTROL

LOGIC

CLK

CKE

MASK

WRITE

MASK

COLOR

INPUT BUFFER

CONTROL

LOGIC

MUX

•

COLUMN

MASK

DQMi

DQi

(i=0~31)

TIMING REGISTER

SENSE

AMPLIFIER

RAS

CAS

DSF

DQMi

•

128Kx32

CELL

ARRAY

128Kx32

CELL

ARRAY

ROW DECORDER

BANK SELECTION

•

SERIAL

COUNTER

COLUMN ADDRESS

BUFFER

ROW ADDRESS

BUFFER

REFRESH

COUNTER

ADDRESS REGISTER

CLOCK ADDRESS(A

)

OUTPUT BUFFER

LATENCY &

BURST LENGTH

PROGRAMING

COLUMN

DECORDER

K4G813222B-PC10 Related Products

	K4G813222B-PC10	K4G813222B-QC10	K4G813222B-PC80	K4G813222B-QC70	K4G813222B-PC70	K4G813222B-UC80	K4G813222B-QC80	K4G813222B-UC70	K4G813222B-UC10
Description	Synchronous Graphics RAM, 256KX32, 7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, PLASTIC, QFP-100	Synchronous Graphics RAM, 256KX32, 7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100	Synchronous Graphics RAM, 256KX32, 6.5ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, PLASTIC, QFP-100	Synchronous Graphics RAM, 256KX32, 6ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100	Synchronous Graphics RAM, 256KX32, 6ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, PLASTIC, QFP-100	Synchronous Graphics RAM, 256KX32, 6.5ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, PLASTIC, REVERSE, QFP-100	Synchronous Graphics RAM, 256KX32, 6.5ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100	Synchronous Graphics RAM, 256KX32, 6ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, PLASTIC, REVERSE, QFP-100	Synchronous Graphics RAM, 256KX32, 7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, PLASTIC, REVERSE, QFP-100
Parts packaging code	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
package instruction	QFP, QFP100,.7X.9	TQFP, TQFP100,.7X.9,25	QFP, QFP100,.7X.9	TQFP, TQFP100,.7X.9,25	QFP, QFP100,.7X.9	QFP,	TQFP, TQFP100,.7X.9,25	QFP,	QFP,
Contacts	100	100	100	100	100	100	100	100	100
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	unknown	compliant	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	7 ns	7 ns	6.5 ns	6 ns	6 ns	6.5 ns	6.5 ns	6 ns	7 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
length	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	SYNCHRONOUS GRAPHICS RAM	SYNCHRONOUS GRAPHICS RAM	SYNCHRONOUS GRAPHICS RAM	SYNCHRONOUS GRAPHICS RAM	SYNCHRONOUS GRAPHICS RAM	SYNCHRONOUS GRAPHICS RAM	SYNCHRONOUS GRAPHICS RAM	SYNCHRONOUS GRAPHICS RAM	SYNCHRONOUS GRAPHICS RAM
memory width	32	32	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	100	100	100	100	100	100	100	100	100
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000	256000	256000	256000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX32	256KX32	256KX32	256KX32	256KX32	256KX32	256KX32	256KX32	256KX32
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QFP	TQFP	QFP	TQFP	QFP	QFP	TQFP	QFP	QFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK, THIN PROFILE	FLATPACK	FLATPACK, THIN PROFILE	FLATPACK	FLATPACK	FLATPACK, THIN PROFILE	FLATPACK	FLATPACK
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	3 mm	1.2 mm	3 mm	1.2 mm	3 mm	3 mm	1.2 mm	3 mm	3 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
width	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	-	incompatible	-	-
Maker	SAMSUNG	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Maximum clock frequency (fCLK)	100 MHz	100 MHz	125 MHz	143 MHz	143 MHz	-	125 MHz	-	-
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	-	COMMON	-	-
interleaved burst length	4,8	4,8	4,8	4,8	4,8	-	4,8	-	-
JESD-609 code	e0	e0	-	e0	e0	-	e0	-	-
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE	-	-
Encapsulate equivalent code	QFP100,.7X.9	TQFP100,.7X.9,25	QFP100,.7X.9	TQFP100,.7X.9,25	QFP100,.7X.9	-	TQFP100,.7X.9,25	-	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	225	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	-
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V	-	-
refresh cycle	1024	1024	1024	1024	1024	-	1024	-	-
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	-	1,2,4,8,FP	-	-
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	-	0.002 A	-	-
Maximum slew rate	0.21 mA	0.21 mA	0.28 mA	0.3 mA	0.3 mA	-	0.28 mA	-	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	-

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