1-TO-1 DIFFERENTIAL- TO-LVCMOS/LVTTL TRANSLATOR
ICS83021I
General Description
The ICS83021I is a 1-to-1 Differential-to-LVCMOS/
LVTTL Translator and a member of the
HiPerClockS™
HiPerClockS™ family of High Performance Clock
Solutions from IDT. The differential input is highly
flexible and can accept the following input types:
LVPECL, LVDS, LVHSTL, SSTL, and HCSL. The small 8-lead
SOIC footprint makes this device ideal for use in applications with
limited board space.
Features
•
•
•
•
•
•
•
•
•
One LVCMOS/LVTTL output
Differential CLK/nCLK input pair
CLK/nCLK pair can accept the following differential
input levels: LVPECL, LVDS, LVHSTL, SSTL, HCSL
Output frequency: 350MHz (typical)
Part-to-part skew: 500ps (maximum)
Additive phase jitter, RMS: 0.21ps (typical), 3.3V output
Full 3.3V and 2.5V operating supply
-40°C to 85°C ambient operating temperature
Available in both standard (RoHS 5) and lead-free (RoHS 6)
packages
ICS
Block Diagram
CLK
Pulldown
nCLK
Pullup
Q0
Pin Assignment
nc
CLK
nCLK
nc
1
2
3
4
8
7
6
5
V
DD
Q0
nc
GND
ICS83021I
8-Lead SOIC, 150Mil
3.9mm x 4.9mm x 1.375mm package body
M Package
Top View
IDT™ / ICS™
LVCMOS/LVTTL TRANSLATOR
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ICS83031AMI REV. C OCTOBER 31, 2008
ICS83021I
1-TO-1 DIFFERENTIAL-TO-LVCMOS/LVTTL TRANSLATOR
Table 1. Pin Descriptions
Number
1, 4, 6
2
3
5
7
8
Name
nc
CLK
nCLK
GND
Q0
V
DD
Unused
Input
Input
Power
Output
Power
Pulldown
Pullup
Type
Description
No connect.
Non-inverting differential clock input.
Inverting differential clock input.
Power supply ground.
Single-ended clock output. LVCMOS/LVTTL interface levels.
Positive supply pin.
NOTE:
Pullup and Pulldown
refer to internal input resistors. See Table 2,
Pin Characteristics,
for typical values.
Table 2. Pin Characteristics
Symbol
C
IN
R
PULLUP
R
PULLDOWN
C
PD
R
OUT
Parameter
Input Capacitance
Input Pullup Resistor
Input Pulldown Resistor
Power Dissipation Capacitance
Output Impedance
V
DD
= 3.6V
5
Test Conditions
Minimum
Typical
4
51
51
23
7
12
Maximum
Units
pF
k
Ω
k
Ω
pF
Ω
IDT™ / ICS™
LVCMOS/LVTTL TRANSLATOR
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ICS83031AMI REV. C OCTOBER 31, 2008
ICS83021I
1-TO-1 DIFFERENTIAL-TO-LVCMOS/LVTTL TRANSLATOR
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under
Absolute Maximum Ratings
may cause permanent damage to the device.
These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond
those listed in the
DC Characteristics or AC Characteristics
is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect product reliability.
Item
Supply Voltage, V
DD
Inputs, V
I
Outputs, V
O
Package Thermal Impedance,
θ
JA
Storage Temperature, T
STG
Rating
4.6V
-0.5V to V
DD
+ 0.5V
-0.5V to V
DD
+ 0.5V
103°C/W (0 lfpm)
-65°C to 150°C
DC Electrical Characteristics
Table 3A. Power Supply DC Characteristics,
V
DD
= 3.3V ± 0.3V or 2.5V ± 5%, T
A
= -40°C to 85°C
Symbol
V
DD
I
DD
Parameter
Positive Supply Voltage
2.375
Power Supply Current
2.5
2.625
20
V
mA
Test Conditions
Minimum
3.0
Typical
3.3
Maximum
3.6
Units
V
Table 3B. LVCMOS/LVTTL DC Characteristics,
V
DD
= 3.3V ± 0.3V or 2.5V ± 5%, T
A
= -40°C to 85°C
Symbol
V
OH
V
OL
Parameter
Output High Voltage; NOTE 1
Output Low Voltage; NOTE 1
Test Conditions
V
DD
= 3.6V
V
DD
= 2.625V
V
DD
= 3.6V or 2.625V
Minimum
2.6
1.8
0.5
Typical
Maximum
Units
V
V
V
NOTE 1: Outputs terminated with 50Ω to V
DD
/2. See Parameter Measurement Information,
Output Load Test Circuit Diagrams.
Table 3C. Differential DC Characteristics,
V
DD
= 3.3V ± 0.3V or 2.5V ± 5%, T
A
= -40°C to 85°C
Symbol
I
IH
Parameter
nCLK
Input High Current
CLK
nCLK
I
IL
V
PP
V
CMR
Input Low Cureent
CLK
Peak-to-Peak Input Voltage
Common Mode Input Voltage;
NOTE 1, 2
Test Conditions
V
IN
= V
DD
= 3.6V or 2.625V
V
IN
= V
DD
= 3.6V or 2.625V
V
IN
= 0V, V
DD
= 3.6V or 2.625V
V
IN
= 0V, V
DD
= 3.6V or 2.625V
-150
-5
0.15
GND + 0.5
1.3
V
DD
– 0.85
Minimum
Typical
Maximum
5
150
Units
µA
µA
µA
µA
V
V
NOTE 1: For single ended applications, the maximum input voltage for CLK, nCLK is V
DD
+ 0.3V.
NOTE 2: Common mode voltage is defined as V
IH
.
IDT™ / ICS™
LVCMOS/LVTTL TRANSLATOR
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ICS83031AMI REV. C OCTOBER 31, 2008
ICS83021I
1-TO-1 DIFFERENTIAL-TO-LVCMOS/LVTTL TRANSLATOR
AC Electrical Characteristics
Table 4A. AC Characteristics,
V
DD
= 3.3V ± 0.3V, T
A
= -40°C to 85°C
Parameter
f
MAX
t
PD
tsk(pp)
tjit
t
R
/ t
F
odc
Symbol
Output Frequency
Propagation Delay, NOTE 1
Part-to-Part Skew; NOTE 2, 3
Buffer Additive Phase Jitter, RMS;
refer to Additive Phase Jitter Section
Output Rise/Fall Time
Output Duty Cycle
100MHz, Integration Range
(637kHz – 10MHz)
0.8V to 2V
ƒ
≤
166MHz
166MHz < ƒ
≤
350MHz
100
45
40
0.21
250
50
50
400
55
60
ƒ
≤
350MHz
1.7
Test Conditions
Minimum
Typical
350
2.0
2.3
500
Maximum
Units
MHz
ns
ps
ps
ps
%
%
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the
device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after
thermal equilibrium has been reached under these conditions.
All parameters measured at f
MAX
unless noted otherwise.
NOTE 1: Measured from the differential input crossing point to the output at V
DD
/2.
NOTE 2: Defined as skew between outputs on different devices operating at the same supply voltage and with equal load conditions.
Using the same type of inputs on each device, the outputs are measured at V
DD
/2.
NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.
Table 4B. AC Characteristics,
V
DD
= 2.5V ± 5%, T
A
= -40°C to 85°C
Parameter
f
MAX
t
PD
tsk(pp)
tjit
t
R
/ t
F
odc
Symbol
Output Frequency
Propagation Delay, NOTE 1
Part-to-Part Skew; NOTE 2, 3
Buffer Additive Phase Jitter, RMS;
refer to Additive Phase Jitter Section
Output Rise/Fall Time
Output Duty Cycle
100MHz, Integration Range
(637kHz – 10MHz)
20% to 80%
ƒ
≤
250MHz
250MHz < ƒ
≤
350MHz
250
45
40
50
50
0.21
550
55
60
ƒ
≤
350MHz
1.9
Test Conditions
Minimum
Typical
350
2.2
2.5
500
Maximum
Units
MHz
ns
ps
ps
ps
%
%
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the
device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after
thermal equilibrium has been reached under these conditions.
All parameters measured at f
MAX
unless noted otherwise.
NOTE 1: Measured from the differential input crossing point to the output at V
DD
/2.
NOTE 2: Defined as skew between outputs on different devices operating at the same supply voltage and with equal load conditions.
Using the same type of inputs on each device, the outputs are measured at V
DD
/2.
NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.
IDT™ / ICS™
LVCMOS/LVTTL TRANSLATOR
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ICS83031AMI REV. C OCTOBER 31, 2008
ICS83021I
1-TO-1 DIFFERENTIAL-TO-LVCMOS/LVTTL TRANSLATOR
Additive Phase Jitter
The spectral purity in a band at a specific offset from the
fundamental compared to the power of the fundamental is called
the
dBc Phase Noise.
This value is normally expressed using a
Phase noise plot and is most often the specified plot in many
applications. Phase noise is defined as the ratio of the noise power
present in a 1Hz band at a specified offset from the fundamental
frequency to the power value of the fundamental. This ratio is
expressed in decibels (dBm) or a ratio of the power in the 1Hz band
to the power in the fundamental. When the required offset is
specified, the phase noise is called a
dBc
value, which simply
means dBm at a specified offset from the fundamental. By
investigating jitter in the frequency domain, we get a better
understanding of its effects on the desired application over the
entire time record of the signal. It is mathematically possible to
calculate an expected bit error rate given a phase noise plot.
Additive Phase Jitter @ 100MHz
12kHz to 20MHz = 0.21ps (typical)
SSB Phase Noise dBc/Hz
Offset Frequency (Hz)
As with most timing specifications, phase noise measurements
has issues relating to the limitations of the equipment. Often the
noise floor of the equipment is higher than the noise floor of the
device. This is illustrated above. The device meets the noise floor
of what is shown, but can actually be lower. The phase noise is
dependent on the input source and measurement equipment.
IDT™ / ICS™
LVCMOS/LVTTL TRANSLATOR
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ICS83031AMI REV. C OCTOBER 31, 2008
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