Small Signal Field-Effect Transistor, 10.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, MS-012, SOIC-8
SI4972DYT1 Parametric
Parameter Name
Attribute value
Maker
Vishay
package instruction
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
ECCN code
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage
30 V
Maximum drain current (ID)
10.8 A
Maximum drain-source on-resistance
0.0145 Ω
FET technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code
MS-012AA
JESD-30 code
R-PDSO-G8
Number of components
2
Number of terminals
8
Operating mode
ENHANCEMENT MODE
Package body material
PLASTIC/EPOXY
Package shape
RECTANGULAR
Package form
SMALL OUTLINE
Polarity/channel type
N-CHANNEL
surface mount
YES
Terminal form
GULL WING
Terminal location
DUAL
transistor applications
SWITCHING
Transistor component materials
SILICON
SI4972DYT1 Preview
Si4972DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
I
D
(A)
a
Q
g
(Typ.)
10.8
9.3
7.2
6.2
8.3
PRODUCT SUMMARY
V
DS
(V)
Channel 1
30
R
DS(on)
(Ω)
0.0145 at V
GS
= 10 V
0.0195 at V
GS
= 4.5 V
0.0265 at V
GS
= 10 V
0.036 at V
GS
= 4.5 V
•
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
Channel 2
30
4
APPLICATIONS
• Logic DC/DC for Notebook PC
D
1
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top
View
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
S
1
Ordering Information:
Si4972DY-T1-E3 (Lead (Pb)-free)
Si4972DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel
MOSFET
S
2
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
Symbol
V
DS
V
GS
Channel 1
30
± 20
10.8
8.7
8.7
b,c
6.9
b,c
20
2.5
1.6
b,c
20
15
11
3.1
2.1
2.0
b,c
1.25
b,c
- 55 to 150
7.2
5.7
6.4
b,c
5.1
b,c
20
2.1
1.6
b,c
20
6
1.8
2.5
1.6
2.0
b,c
1.25
b,c
Channel 2
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Avalanche Energy
I
DM
I
S
I
SM
I
AS
E
AS
A
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
mJ
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Symbol
R
thJA
R
thJF
Channel 1
Typical
Maximum
52
62.5
32
40
Channel 2
Typical
Maximum
55
62.5
40
50
Unit
°C/W
t
≤
10 s
Steady
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W (Ch 1) and 120 °C/W (Ch 2).
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
www.vishay.com
1
Si4972DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Symbol
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 6 A
V
GS
= 10 V, I
D
= 4.5 A
V
GS
= 4.5 V, I
D
= 5.6 A
V
GS
= 4.5 V, I
D
= 4 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
Channel 2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 5 A
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 5 A
Channel 1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
Channel 2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 5 A
f = 1 MHz
Ch 1
Channel 1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
1080
515
170
91
72
38
18.5
9.6
8.3
4
3.9
1.9
2.7
1.3
2.5
2.9
3.8
4.4
Ω
28
15
13
6
nC
pF
g
fs
V
DS
= 15 V, I
D
= 6 A
V
DS
= 15 V, I
D
= 4.5 A
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
10
10
0.012
0.022
0.016
0.030
27
20
0.0145
0.0265
0.0195
0.036
S
Ω
1.5
1.5
Min.
30
30
35
35
- 6.5
- 6.5
3.0
3.0
100
100
1
1
10
10
A
µA
V
nA
Typ.
a
Max.
Unit
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
V
mV/°C
Drain-Source On-State
Resistance
b
R
DS(on)
www.vishay.com
2
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
Si4972DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Ch 1
Channel 1
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
Channel 2
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Channel 1
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Channel 2
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 16
Ω
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
I
S
= 1.6 A
I
S
= 1.6 A
Ch 1
Ch 2
Ch 1
Ch 2
Channel 1
I
F
= 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel 2
I
F
= 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
0.77
0.79
21
18
15
11
13
11
8
7
12
10
55
60
30
22
7
6
120
108
150
130
29
19
13
26
18
15
83
90
45
33
11
9
180
162
225
195
44
29
20
39
2.5
2.1
20
20
1.2
1.2
42
36
30
22
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode
Current
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
www.vishay.com
3
Si4972DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 10
V
thru 4
V
24
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
1.6
2.0
18
1.2
12
0.8
T
C
= 125 °C
25 °C
6
3
V
0
0.0
0.4
- 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics (Ch 1)
0.020
1500
Transfer Characteristics (Ch 1)
R
DS(on)
- On-Resistance (m )
0.018
C - Capacitance (pF)
1200
V
GS
= 4.5
V
C
iss
0.016
900
0.014
V
GS
= 10
V
0.012
600
300
C
oss
0.010
0
6
12
18
24
30
0
0
C
rss
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage (Ch 1)
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