DIGITRON SEMICONDUCTORS
MCR22 SERIES
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(1)
(R
GK
= 1K, T
J
= -40 to +110°C, sine wave, 50 to 60Hz)
MCR22-2
MCR22-3
MCR22-4
MCR22-5
MCR22-6
MCR22-7
MCR22-8
On-state RMS current
(180° conduction angles, T
C
= 80°C)
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, T
A
= 25°C)
Circuit fusing consideration
(t = 8.3ms)
Forward peak gate power
(pulse width
≤
1.0µs, T
A
= 25°C)
Forward average gate power
(t = 8.3ms, T
A
= 25°C)
Forward peak gate current
(pulse width
≤
1.0µs, T
A
= 25°C)
Reverse peak gate voltage
(pulse width
≤
1.0µs, T
A
= 25°C)
Operating temperature range @ rated V
RRM
and V
DRM
Storage temperature range
Symbol
Value
Unit
V
DRM
V
RRM
50
100
200
300
400
500
600
1.5
15
0.9
0.5
0.1
0.2
5.0
-40 to +110
-40 to +150
V
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
RGM
T
J
T
stg
A
A
A
2
s
W
W
A
V
°C
°C
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Lead solder temperature
(lead length
≥
1/16” from case, 10s max)
Symbol
R
ӨJC
R
ӨJA
T
L
Maximum
50
160
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(V
AK
= Rated V
DRM
or V
RRM
, R
GK
= 1000
Ω)
T
C
= 25°C
T
C
= 110°C
ON CHARACTERISTICS
Peak forward on-state voltage
*
(I
TM
= 1A)
Gate trigger current
(continuous dc)
(V
AK
= 6V, R
L
= 100Ω)
T
C
= 25°C
T
C
= -40°C
(2)
Symbol
Min
Typ
Max
Unit
I
DRM,
I
RRM
-
-
-
-
10
200
µA
V
TM
-
1.2
1.7
V
I
GT
-
-
30
-
200
500
µA
Gate trigger voltage
(continuous dc)
(2)
(V
AK
= 7V, R
L
= 100Ω)
T
C
= 25°C
T
C
= -40°C
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
V
GT
-
-
-
-
0.8
1.2
V
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130115
DIGITRON SEMICONDUCTORS
MCR22 SERIES
Gate non-trigger voltage
*
(V
AK
= 12V, R
L
= 100Ω, T
C
= 110°C)
Holding current
(
V
AK
= 12V, gate open, initiating current = 200mA)
T
C
= 25°C
T
C
= -40°C
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(T
C
= 110°C)
* Pulse width
≤
1.0ms, duty cycle
≤
1%.
Note 2: R
GK
current not included in measurement.
SILICON CONTROLLED RECTIFIERS
V
GD
0.1
-
-
V
I
H
-
-
-
2.0
-
25
5.0
10
-
mA
dv/dt
V/µs
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-92
Alpha-numeric
See below
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130115
Embedded System
京公网安备 11010802033920号
EEWORLD
